Ferroelectrics Based on HfO<sub>2</sub> Film
The discovery of ferroelectricity in HfO<sub>2</sub> thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO<sub>2</sub> has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rap...
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| Format: | article |
| Langue: | EN |
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MDPI AG
2021
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| Accès en ligne: | https://doaj.org/article/28340562a012470a9a5e88e61c54f820 |
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