Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric...

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Autores principales:	Anubha Bilgaiyan, Seung-Il Cho, Miho Abiko, Kaori Watanabe, Makoto Mizukami
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/296af99b39fc4acaa24f96ee0ca107fa
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spelling	oai:doaj.org-article:296af99b39fc4acaa24f96ee0ca107fa2021-12-02T15:02:39ZFlexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT10.1038/s41598-021-91239-72045-2322https://doaj.org/article/296af99b39fc4acaa24f96ee0ca107fa2021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91239-7https://doaj.org/toc/2045-2322Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f]thieno[3,2-b]thiophene (4H–21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a high saturation mobility of 8.8 cm2 V−1 s−1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 μm and an average carrier mobility of 10.5 cm2 V−1 s−1 for long channel length OTFTs (> 50 μm). The pseudo-CMOS inverter circuit with a channel length of 15 μm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 μs. The uniform and reproducible performance of 4H–21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.Anubha BilgaiyanSeung-Il ChoMiho AbikoKaori WatanabeMakoto MizukamiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Anubha Bilgaiyan Seung-Il Cho Miho Abiko Kaori Watanabe Makoto Mizukami Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT
description	Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f]thieno[3,2-b]thiophene (4H–21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a high saturation mobility of 8.8 cm2 V−1 s−1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 μm and an average carrier mobility of 10.5 cm2 V−1 s−1 for long channel length OTFTs (> 50 μm). The pseudo-CMOS inverter circuit with a channel length of 15 μm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 μs. The uniform and reproducible performance of 4H–21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.
format	article
author	Anubha Bilgaiyan Seung-Il Cho Miho Abiko Kaori Watanabe Makoto Mizukami
author_facet	Anubha Bilgaiyan Seung-Il Cho Miho Abiko Kaori Watanabe Makoto Mizukami
author_sort	Anubha Bilgaiyan
title	Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT
title_short	Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT
title_full	Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT
title_fullStr	Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT
title_full_unstemmed	Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT
title_sort	flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4h–21dntt
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/296af99b39fc4acaa24f96ee0ca107fa
work_keys_str_mv	AT anubhabilgaiyan flexiblehighmobilityshortchannelorganicthinfilmtransistorsandlogiccircuitsbasedon4h21dntt AT seungilcho flexiblehighmobilityshortchannelorganicthinfilmtransistorsandlogiccircuitsbasedon4h21dntt AT mihoabiko flexiblehighmobilityshortchannelorganicthinfilmtransistorsandlogiccircuitsbasedon4h21dntt AT kaoriwatanabe flexiblehighmobilityshortchannelorganicthinfilmtransistorsandlogiccircuitsbasedon4h21dntt AT makotomizukami flexiblehighmobilityshortchannelorganicthinfilmtransistorsandlogiccircuitsbasedon4h21dntt
_version_	1718389066635935744

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT

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