Evidence of indirect gap in monolayer WSe2

Evidence of indirect gap in monolayer WSe2

Monolayer transition metal dichalcogenides have so far been thought to be direct bandgap semiconductors. Here, the authors revisit this assumption and find that unstrained monolayer WSe2 is an indirect-gap material, as evidenced by the observed photoluminescence intensity-energy correlation.

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Detalles Bibliográficos
Autores principales: Wei-Ting Hsu, Li-Syuan Lu, Dean Wang, Jing-Kai Huang, Ming-Yang Li, Tay-Rong Chang, Yi-Chia Chou, Zhen-Yu Juang, Horng-Tay Jeng, Lain-Jong Li, Wen-Hao Chang
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
Science
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Acceso en línea:https://doaj.org/article/296f01bc35924bbdaaf89a2782f6ae99
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