High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Point defects in solids have potential applications in quantum technologies, but the mechanisms underlying different defects’ performance are not fully established. Nagy et al. show how the wavefunction symmetry of silicon vacancies in SiC leads to promising optical and spin coherence properties.

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Autores principales:	Roland Nagy, Matthias Niethammer, Matthias Widmann, Yu-Chen Chen, Péter Udvarhelyi, Cristian Bonato, Jawad Ul Hassan, Robin Karhu, Ivan G. Ivanov, Nguyen Tien Son, Jeronimo R. Maze, Takeshi Ohshima, Öney O. Soykal, Ádám Gali, Sang-Yun Lee, Florian Kaiser, Jörg Wrachtrup
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/29df93bbefcf4de6aa53ece77549515f
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spelling	oai:doaj.org-article:29df93bbefcf4de6aa53ece77549515f2021-12-02T15:35:52ZHigh-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide10.1038/s41467-019-09873-92041-1723https://doaj.org/article/29df93bbefcf4de6aa53ece77549515f2019-04-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-09873-9https://doaj.org/toc/2041-1723Point defects in solids have potential applications in quantum technologies, but the mechanisms underlying different defects’ performance are not fully established. Nagy et al. show how the wavefunction symmetry of silicon vacancies in SiC leads to promising optical and spin coherence properties.Roland NagyMatthias NiethammerMatthias WidmannYu-Chen ChenPéter UdvarhelyiCristian BonatoJawad Ul HassanRobin KarhuIvan G. IvanovNguyen Tien SonJeronimo R. MazeTakeshi OhshimaÖney O. SoykalÁdám GaliSang-Yun LeeFlorian KaiserJörg WrachtrupNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Roland Nagy Matthias Niethammer Matthias Widmann Yu-Chen Chen Péter Udvarhelyi Cristian Bonato Jawad Ul Hassan Robin Karhu Ivan G. Ivanov Nguyen Tien Son Jeronimo R. Maze Takeshi Ohshima Öney O. Soykal Ádám Gali Sang-Yun Lee Florian Kaiser Jörg Wrachtrup High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
description	Point defects in solids have potential applications in quantum technologies, but the mechanisms underlying different defects’ performance are not fully established. Nagy et al. show how the wavefunction symmetry of silicon vacancies in SiC leads to promising optical and spin coherence properties.
format	article
author	Roland Nagy Matthias Niethammer Matthias Widmann Yu-Chen Chen Péter Udvarhelyi Cristian Bonato Jawad Ul Hassan Robin Karhu Ivan G. Ivanov Nguyen Tien Son Jeronimo R. Maze Takeshi Ohshima Öney O. Soykal Ádám Gali Sang-Yun Lee Florian Kaiser Jörg Wrachtrup
author_facet	Roland Nagy Matthias Niethammer Matthias Widmann Yu-Chen Chen Péter Udvarhelyi Cristian Bonato Jawad Ul Hassan Robin Karhu Ivan G. Ivanov Nguyen Tien Son Jeronimo R. Maze Takeshi Ohshima Öney O. Soykal Ádám Gali Sang-Yun Lee Florian Kaiser Jörg Wrachtrup
author_sort	Roland Nagy
title	High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_short	High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_full	High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_fullStr	High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_full_unstemmed	High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_sort	high-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/29df93bbefcf4de6aa53ece77549515f
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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

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