High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Point defects in solids have potential applications in quantum technologies, but the mechanisms underlying different defects’ performance are not fully established. Nagy et al. show how the wavefunction symmetry of silicon vacancies in SiC leads to promising optical and spin coherence properties.

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Detalles Bibliográficos
Autores principales: Roland Nagy, Matthias Niethammer, Matthias Widmann, Yu-Chen Chen, Péter Udvarhelyi, Cristian Bonato, Jawad Ul Hassan, Robin Karhu, Ivan G. Ivanov, Nguyen Tien Son, Jeronimo R. Maze, Takeshi Ohshima, Öney O. Soykal, Ádám Gali, Sang-Yun Lee, Florian Kaiser, Jörg Wrachtrup
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/29df93bbefcf4de6aa53ece77549515f
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