Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients

The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), and Nernst–Ettingshausen coefficient (Q) for five Pb0.82Sn0.18Te samples with different charge carrier concentrations in a temperature range of 100–300 K have been studied. According to the obtained ex...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Meglei, Dragoş, Alexeeva, Svetlana
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2018
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/29e7232f1a1140aab517fd0ae1ebe870
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:29e7232f1a1140aab517fd0ae1ebe870
record_format	dspace
spelling	oai:doaj.org-article:29e7232f1a1140aab517fd0ae1ebe8702021-11-21T11:56:06ZDetermination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients537.62537-63651810-648Xhttps://doaj.org/article/29e7232f1a1140aab517fd0ae1ebe8702018-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2018/article/71373https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), and Nernst–Ettingshausen coefficient (Q) for five Pb0.82Sn0.18Te samples with different charge carrier concentrations in a temperature range of 100–300 K have been studied. According to the obtained experimental data, the temperature dependences of the mobility and the effective scattering parameter have been calculated. The main features of the experimental data can be interpreted in terms of a two-band model of the valence band structure with several groups of holes involved in the transport phenomena. It has been found that the behavior of the temperature dependence of the effective scattering parameter significantly depends on the charge carrier concentration. The determined quantitative values of the effective scattering parameter are consistent with the concepts of a mixed scattering mechanism.Meglei, DragoşAlexeeva, SvetlanaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 17, Iss 3-4, Pp 148-153 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Meglei, Dragoş Alexeeva, Svetlana Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients
description	The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), and Nernst–Ettingshausen coefficient (Q) for five Pb0.82Sn0.18Te samples with different charge carrier concentrations in a temperature range of 100–300 K have been studied. According to the obtained experimental data, the temperature dependences of the mobility and the effective scattering parameter have been calculated. The main features of the experimental data can be interpreted in terms of a two-band model of the valence band structure with several groups of holes involved in the transport phenomena. It has been found that the behavior of the temperature dependence of the effective scattering parameter significantly depends on the charge carrier concentration. The determined quantitative values of the effective scattering parameter are consistent with the concepts of a mixed scattering mechanism.
format	article
author	Meglei, Dragoş Alexeeva, Svetlana
author_facet	Meglei, Dragoş Alexeeva, Svetlana
author_sort	Meglei, Dragoş
title	Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients
title_short	Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients
title_full	Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients
title_fullStr	Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients
title_full_unstemmed	Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients
title_sort	determination of charge carrier system parameters in pb1–xsnxte by joint analysis of temperature dependences of four kinetic coefficients
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2018
url	https://doaj.org/article/29e7232f1a1140aab517fd0ae1ebe870
work_keys_str_mv	AT megleidragos determinationofchargecarriersystemparametersinpb1xsnxtebyjointanalysisoftemperaturedependencesoffourkineticcoefficients AT alexeevasvetlana determinationofchargecarriersystemparametersinpb1xsnxtebyjointanalysisoftemperaturedependencesoffourkineticcoefficients
_version_	1718419354278690816

Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients

Ejemplares similares