Determination of charge carrier system parameters in Pb1–xSnxTe by joint analysis of temperature dependences of four kinetic coefficients
The temperature dependences of electrical conductivity (σ), Hall coefficient (R), thermopower (α), and Nernst–Ettingshausen coefficient (Q) for five Pb0.82Sn0.18Te samples with different charge carrier concentrations in a temperature range of 100–300 K have been studied. According to the obtained ex...
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| Auteurs principaux: | , |
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| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2018
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| Accès en ligne: | https://doaj.org/article/29e7232f1a1140aab517fd0ae1ebe870 |
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