Magnetic breakdown in 2D hole system at GaAs/Al0.5Ga0.5As heterointerface

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Magnetic breakdown in 2D hole system at GaAs/Al0.5Ga0.5As heterointerface

The magnetic breakdown development under uniaxial stress has been detected for the first time in 2D hole gas at p-GaAs/Al0.5Ga0.5As heterointerface and indicates the specific character of the FS transformation.

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Detalles Bibliográficos
Autores principales:	Minina, N., Bogdanov, E., Savin, A., Ilievsky, A., Polianskii, A.
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/2a122df28289499a900e8868ce96ef0e
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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