Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candida...

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Autor principal:	Ying-Chen Chen
Formato:	article
Lenguaje:	EN
Publicado:	Frontiers Media S.A. 2021
Materias:	selectorless OTP fuse resistive random-access memory self-rectify Chemical technology TP1-1185
Acceso en línea:	https://doaj.org/article/2a1e46a3a440454c928b550db550aebe
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spelling	oai:doaj.org-article:2a1e46a3a440454c928b550db550aebe2021-11-22T05:10:54ZSelf-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications2673-301310.3389/fnano.2021.772234https://doaj.org/article/2a1e46a3a440454c928b550db550aebe2021-11-01T00:00:00Zhttps://www.frontiersin.org/articles/10.3389/fnano.2021.772234/fullhttps://doaj.org/toc/2673-3013A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).Ying-Chen ChenFrontiers Media S.A.articleselectorlessOTPfuseresistive random-access memoryself-rectifyChemical technologyTP1-1185ENFrontiers in Nanotechnology, Vol 3 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	selectorless OTP fuse resistive random-access memory self-rectify Chemical technology TP1-1185
spellingShingle	selectorless OTP fuse resistive random-access memory self-rectify Chemical technology TP1-1185 Ying-Chen Chen Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications
description	A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candidate for one-time programmable (OTP) in the emerging memory-embedded applications such as security, system-on-chip (SoC), and Internet of Things (IoT).
format	article
author	Ying-Chen Chen
author_facet	Ying-Chen Chen
author_sort	Ying-Chen Chen
title	Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications
title_short	Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications
title_full	Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications
title_fullStr	Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications
title_full_unstemmed	Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications
title_sort	self-rectified graphite-based reprogrammable one-time programmable (rs-otp) memory for embedded applications
publisher	Frontiers Media S.A.
publishDate	2021
url	https://doaj.org/article/2a1e46a3a440454c928b550db550aebe
work_keys_str_mv	AT yingchenchen selfrectifiedgraphitebasedreprogrammableonetimeprogrammablersotpmemoryforembeddedapplications
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Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications

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