Self-Rectified Graphite-Based Reprogrammable One-Time Programmable (RS-OTP) Memory for Embedded Applications
A graphite-based RRAM device with a self-rectifying characteristic named “non-linearity (NL)” is developed for a high-density crossbar array for in-memory computing with low power and high scalability. Meanwhile, the reprogrammable functions are presented in self-selected RRAM as a promising candida...
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Autor principal: | Ying-Chen Chen |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Frontiers Media S.A.
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/2a1e46a3a440454c928b550db550aebe |
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