Reversible displacive transformation in MnTe polymorphic semiconductor

Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.

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Autores principales:	Shunsuke Mori, Shogo Hatayama, Yi Shuang, Daisuke Ando, Yuji Sutou
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/2a3e41db05ea44e9a4aa201ed7dfe1d5
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spelling	oai:doaj.org-article:2a3e41db05ea44e9a4aa201ed7dfe1d52021-12-02T15:39:23ZReversible displacive transformation in MnTe polymorphic semiconductor10.1038/s41467-019-13747-52041-1723https://doaj.org/article/2a3e41db05ea44e9a4aa201ed7dfe1d52020-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-13747-5https://doaj.org/toc/2041-1723Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.Shunsuke MoriShogo HatayamaYi ShuangDaisuke AndoYuji SutouNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Shunsuke Mori Shogo Hatayama Yi Shuang Daisuke Ando Yuji Sutou Reversible displacive transformation in MnTe polymorphic semiconductor
description	Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.
format	article
author	Shunsuke Mori Shogo Hatayama Yi Shuang Daisuke Ando Yuji Sutou
author_facet	Shunsuke Mori Shogo Hatayama Yi Shuang Daisuke Ando Yuji Sutou
author_sort	Shunsuke Mori
title	Reversible displacive transformation in MnTe polymorphic semiconductor
title_short	Reversible displacive transformation in MnTe polymorphic semiconductor
title_full	Reversible displacive transformation in MnTe polymorphic semiconductor
title_fullStr	Reversible displacive transformation in MnTe polymorphic semiconductor
title_full_unstemmed	Reversible displacive transformation in MnTe polymorphic semiconductor
title_sort	reversible displacive transformation in mnte polymorphic semiconductor
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/2a3e41db05ea44e9a4aa201ed7dfe1d5
work_keys_str_mv	AT shunsukemori reversibledisplacivetransformationinmntepolymorphicsemiconductor AT shogohatayama reversibledisplacivetransformationinmntepolymorphicsemiconductor AT yishuang reversibledisplacivetransformationinmntepolymorphicsemiconductor AT daisukeando reversibledisplacivetransformationinmntepolymorphicsemiconductor AT yujisutou reversibledisplacivetransformationinmntepolymorphicsemiconductor
_version_	1718385921883111424

Reversible displacive transformation in MnTe polymorphic semiconductor

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