Reversible displacive transformation in MnTe polymorphic semiconductor
Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | article |
| Language: | EN |
| Published: |
Nature Portfolio
2020
|
| Subjects: | |
| Online Access: | https://doaj.org/article/2a3e41db05ea44e9a4aa201ed7dfe1d5 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|