Reversible displacive transformation in MnTe polymorphic semiconductor
Designing low power consumption and fast operation electronic phase-change devices remains a challenge. Here, the authors demonstrate the reversible displacive transformation in polycrystalline MnTe films to enable resistive switching via fast Joule heating for fast nonvolatile memory applications.
Guardado en:
Autores principales: | Shunsuke Mori, Shogo Hatayama, Yi Shuang, Daisuke Ando, Yuji Sutou |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
|
Materias: | |
Acceso en línea: | https://doaj.org/article/2a3e41db05ea44e9a4aa201ed7dfe1d5 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
por: D. Kriegner, et al.
Publicado: (2016) -
The central role of NADPH depletion in MnTE-2-PyP-induced prostate cancer cell growth inhibition
por: Yuxiang Zhu, et al.
Publicado: (2021) -
Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material
por: Yuta Saito, et al.
Publicado: (2021) -
Spin-texture inversion in the giant Rashba semiconductor BiTeI
por: Henriette Maaß, et al.
Publicado: (2016) -
Manganese Detoxification by MntE Is Critical for Resistance to Oxidative Stress and Virulence of <italic toggle="yes">Staphylococcus aureus</italic>
por: Caroline M. Grunenwald, et al.
Publicado: (2019)