Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ dson}}$ </tex-math></inline...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/2ae864ef162641c9a493f2c056ae5aca |
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| Sumario: | A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ dson}}$ </tex-math></inline-formula>) of AlGaN/GaN high electron mobility transistor (HEMT) power devices. The response time required for the drain voltage to drop back to the on-voltage of this testing circuit can reach 100 ns, and the forward voltage drop of the isolation diode is monitored in real time using low-voltage probes. A low value constant current source is built to power the testing circuit at only several mA to avoid additional self-heating effect. With these improvements, we can obtain a test frequency of more than 1 MHz, a test voltage of more than 600 V and an accuracy of higher than 97.8% for the extraction of dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>. |
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