Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method

A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ dson}}$ </tex-math></inline...

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Autores principales:	Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Fulong Jiang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	AlGaN/GaN HEMT device dynamic on-resistance parasitic capacitance trapping effect Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/2ae864ef162641c9a493f2c056ae5aca
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spelling	oai:doaj.org-article:2ae864ef162641c9a493f2c056ae5aca2021-11-19T00:01:05ZPrecise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method2168-673410.1109/JEDS.2019.2927608https://doaj.org/article/2ae864ef162641c9a493f2c056ae5aca2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8758228/https://doaj.org/toc/2168-6734A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ dson}}$ </tex-math></inline-formula>) of AlGaN/GaN high electron mobility transistor (HEMT) power devices. The response time required for the drain voltage to drop back to the on-voltage of this testing circuit can reach 100 ns, and the forward voltage drop of the isolation diode is monitored in real time using low-voltage probes. A low value constant current source is built to power the testing circuit at only several mA to avoid additional self-heating effect. With these improvements, we can obtain a test frequency of more than 1 MHz, a test voltage of more than 600 V and an accuracy of higher than 97.8% for the extraction of dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>.Jianming LeiRui WangGuo YangJin WangFulong JiangDunjun ChenHai LuRong ZhangYoudou ZhengIEEEarticleAlGaN/GaN HEMT devicedynamic on-resistanceparasitic capacitancetrapping effectElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 690-695 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	AlGaN/GaN HEMT device dynamic on-resistance parasitic capacitance trapping effect Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	AlGaN/GaN HEMT device dynamic on-resistance parasitic capacitance trapping effect Electrical engineering. Electronics. Nuclear engineering TK1-9971 Jianming Lei Rui Wang Guo Yang Jin Wang Fulong Jiang Dunjun Chen Hai Lu Rong Zhang Youdou Zheng Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
description	A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance (<inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{ dson}}$ </tex-math></inline-formula>) of AlGaN/GaN high electron mobility transistor (HEMT) power devices. The response time required for the drain voltage to drop back to the on-voltage of this testing circuit can reach 100 ns, and the forward voltage drop of the isolation diode is monitored in real time using low-voltage probes. A low value constant current source is built to power the testing circuit at only several mA to avoid additional self-heating effect. With these improvements, we can obtain a test frequency of more than 1 MHz, a test voltage of more than 600 V and an accuracy of higher than 97.8% for the extraction of dynamic <inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ dson}}$ </tex-math></inline-formula>.
format	article
author	Jianming Lei Rui Wang Guo Yang Jin Wang Fulong Jiang Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
author_facet	Jianming Lei Rui Wang Guo Yang Jin Wang Fulong Jiang Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
author_sort	Jianming Lei
title	Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
title_short	Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
title_full	Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
title_fullStr	Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
title_full_unstemmed	Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
title_sort	precise extraction of dynamic <italic>r</italic><sub>dson</sub> under high frequency and high voltage by a double-diode-isolation method
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/2ae864ef162641c9a493f2c056ae5aca
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Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method

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