Te-based chalcogenide materials for selector applications

Abstract The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low...

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Autores principales:	A. Velea, K. Opsomer, W. Devulder, J. Dumortier, J. Fan, C. Detavernier, M. Jurczak, B. Govoreanu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2bd26a42955f4c44a4582f06d5722f80
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spelling	oai:doaj.org-article:2bd26a42955f4c44a4582f06d5722f802021-12-02T11:53:13ZTe-based chalcogenide materials for selector applications10.1038/s41598-017-08251-z2045-2322https://doaj.org/article/2bd26a42955f4c44a4582f06d5722f802017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-08251-zhttps://doaj.org/toc/2045-2322Abstract The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 × 55 nm2, were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability.A. VeleaK. OpsomerW. DevulderJ. DumortierJ. FanC. DetavernierM. JurczakB. GovoreanuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q A. Velea K. Opsomer W. Devulder J. Dumortier J. Fan C. Detavernier M. Jurczak B. Govoreanu Te-based chalcogenide materials for selector applications
description	Abstract The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 × 55 nm2, were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability.
format	article
author	A. Velea K. Opsomer W. Devulder J. Dumortier J. Fan C. Detavernier M. Jurczak B. Govoreanu
author_facet	A. Velea K. Opsomer W. Devulder J. Dumortier J. Fan C. Detavernier M. Jurczak B. Govoreanu
author_sort	A. Velea
title	Te-based chalcogenide materials for selector applications
title_short	Te-based chalcogenide materials for selector applications
title_full	Te-based chalcogenide materials for selector applications
title_fullStr	Te-based chalcogenide materials for selector applications
title_full_unstemmed	Te-based chalcogenide materials for selector applications
title_sort	te-based chalcogenide materials for selector applications
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2bd26a42955f4c44a4582f06d5722f80
work_keys_str_mv	AT avelea tebasedchalcogenidematerialsforselectorapplications AT kopsomer tebasedchalcogenidematerialsforselectorapplications AT wdevulder tebasedchalcogenidematerialsforselectorapplications AT jdumortier tebasedchalcogenidematerialsforselectorapplications AT jfan tebasedchalcogenidematerialsforselectorapplications AT cdetavernier tebasedchalcogenidematerialsforselectorapplications AT mjurczak tebasedchalcogenidematerialsforselectorapplications AT bgovoreanu tebasedchalcogenidematerialsforselectorapplications
_version_	1718394857518530560

Te-based chalcogenide materials for selector applications

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