Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory

The effects of residual stress on a tungsten gate in a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings, with respect to the distance from the tungsten slit, were also analyzed. The scaling of the spacer thic...

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Autores principales:	Juyoung Lee, Dong-Gwan Yoon, Jae-Min Sim, Yun-Heub Song
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	3D NAND hole profile mechanical stress polysilicon channel scaling TCAD Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/2beacfad825948869e65e4aafc0373f8
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id	oai:doaj.org-article:2beacfad825948869e65e4aafc0373f8
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spelling	oai:doaj.org-article:2beacfad825948869e65e4aafc0373f82021-11-11T15:38:46ZImpact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory10.3390/electronics102126322079-9292https://doaj.org/article/2beacfad825948869e65e4aafc0373f82021-10-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/21/2632https://doaj.org/toc/2079-9292The effects of residual stress on a tungsten gate in a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings, with respect to the distance from the tungsten slit, were also analyzed. The scaling of the spacer thickness and hole diameter induced compressive stress on the polysilicon channel. Moreover, the residual stress of polysilicon channel in the string near the tungsten slit had greater compressive stress than the string farther away. The increase in compressive stress in the polysilicon channel degraded the Bit-Line current (I<sub>on</sub>) due to stress-induced electron mobility deterioration. Moreover, a threshold voltage shift (∆V<sub>th</sub>) occurred in the negative direction due to conduction band lowering.Juyoung LeeDong-Gwan YoonJae-Min SimYun-Heub SongMDPI AGarticle3D NANDhole profilemechanical stresspolysilicon channelscalingTCADElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2632, p 2632 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	3D NAND hole profile mechanical stress polysilicon channel scaling TCAD Electronics TK7800-8360
spellingShingle	3D NAND hole profile mechanical stress polysilicon channel scaling TCAD Electronics TK7800-8360 Juyoung Lee Dong-Gwan Yoon Jae-Min Sim Yun-Heub Song Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
description	The effects of residual stress on a tungsten gate in a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings, with respect to the distance from the tungsten slit, were also analyzed. The scaling of the spacer thickness and hole diameter induced compressive stress on the polysilicon channel. Moreover, the residual stress of polysilicon channel in the string near the tungsten slit had greater compressive stress than the string farther away. The increase in compressive stress in the polysilicon channel degraded the Bit-Line current (I<sub>on</sub>) due to stress-induced electron mobility deterioration. Moreover, a threshold voltage shift (∆V<sub>th</sub>) occurred in the negative direction due to conduction band lowering.
format	article
author	Juyoung Lee Dong-Gwan Yoon Jae-Min Sim Yun-Heub Song
author_facet	Juyoung Lee Dong-Gwan Yoon Jae-Min Sim Yun-Heub Song
author_sort	Juyoung Lee
title	Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
title_short	Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
title_full	Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
title_fullStr	Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
title_full_unstemmed	Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
title_sort	impact of residual stress on a polysilicon channel in scaled 3d nand flash memory
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/2beacfad825948869e65e4aafc0373f8
work_keys_str_mv	AT juyounglee impactofresidualstressonapolysiliconchannelinscaled3dnandflashmemory AT donggwanyoon impactofresidualstressonapolysiliconchannelinscaled3dnandflashmemory AT jaeminsim impactofresidualstressonapolysiliconchannelinscaled3dnandflashmemory AT yunheubsong impactofresidualstressonapolysiliconchannelinscaled3dnandflashmemory
_version_	1718434656296108032

Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory

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