Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory
The effects of residual stress on a tungsten gate in a polysilicon channel in scaled 3D NAND flash memories were investigated using a technology computer-aided design simulation. The NAND strings, with respect to the distance from the tungsten slit, were also analyzed. The scaling of the spacer thic...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/2beacfad825948869e65e4aafc0373f8 |
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