Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid

Using the potentiostatic electrodeposition technique, zinc telluride nanocrystalline thin films and an array of nanowires were synthesized in a citric acid bath. Electrodeposited zinc telluride thin films with stoichiometric compositions were obtained at a cathode potential of approximately −0.8 V v...

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Autores principales:	Jun Ohta, Takeshi Ohgai
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	electrodeposition zinc tellurium thin film nanowire semiconductor Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/2c68e1fac0a64476a7397d021ab5d219
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spelling	oai:doaj.org-article:2c68e1fac0a64476a7397d021ab5d2192021-11-25T16:33:34ZPost-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid10.3390/app1122106322076-3417https://doaj.org/article/2c68e1fac0a64476a7397d021ab5d2192021-11-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/22/10632https://doaj.org/toc/2076-3417Using the potentiostatic electrodeposition technique, zinc telluride nanocrystalline thin films and an array of nanowires were synthesized in a citric acid bath. Electrodeposited zinc telluride thin films with stoichiometric compositions were obtained at a cathode potential of approximately −0.8 V versus Ag/AgCl, which was in a more noble region compared with the equilibrium potential of zinc. The average thickness of the zinc telluride thin films was approximately 3 μm, and the average growth rate was approximately 3 nm s<sup>−1</sup>. The as-deposited zinc telluride thin films had an amorphous phase with a black tint. By contrast, the zinc telluride thin films annealed at 683 K had a crystalline phase with a reddish-brown tint. The electrodeposited single-phase zinc telluride exhibited an optical absorption performance in a wavelength region that was shorter than 559 nm. At the annealing temperature of 683 K, the zinc telluride films exhibited an energy band gap of 2.3 eV, which was almost identical to that of single-crystal zinc telluride. The resistivity of the as-deposited amorphous-like zinc telluride thin films was approximately 2 × 10<sup>5</sup> Ω·m, whereas that of the samples annealed at 683 K was around 2 × 10<sup>3</sup> Ω·m, which was smaller than that of single-crystal zinc telluride. A three-dimensional nanostructure constructed with the zinc telluride nanowire array was also demonstrated using a template synthesis technique.Jun OhtaTakeshi OhgaiMDPI AGarticleelectrodepositionzinctelluriumthin filmnanowiresemiconductorTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 10632, p 10632 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	electrodeposition zinc tellurium thin film nanowire semiconductor Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
spellingShingle	electrodeposition zinc tellurium thin film nanowire semiconductor Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 Jun Ohta Takeshi Ohgai Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid
description	Using the potentiostatic electrodeposition technique, zinc telluride nanocrystalline thin films and an array of nanowires were synthesized in a citric acid bath. Electrodeposited zinc telluride thin films with stoichiometric compositions were obtained at a cathode potential of approximately −0.8 V versus Ag/AgCl, which was in a more noble region compared with the equilibrium potential of zinc. The average thickness of the zinc telluride thin films was approximately 3 μm, and the average growth rate was approximately 3 nm s<sup>−1</sup>. The as-deposited zinc telluride thin films had an amorphous phase with a black tint. By contrast, the zinc telluride thin films annealed at 683 K had a crystalline phase with a reddish-brown tint. The electrodeposited single-phase zinc telluride exhibited an optical absorption performance in a wavelength region that was shorter than 559 nm. At the annealing temperature of 683 K, the zinc telluride films exhibited an energy band gap of 2.3 eV, which was almost identical to that of single-crystal zinc telluride. The resistivity of the as-deposited amorphous-like zinc telluride thin films was approximately 2 × 10<sup>5</sup> Ω·m, whereas that of the samples annealed at 683 K was around 2 × 10<sup>3</sup> Ω·m, which was smaller than that of single-crystal zinc telluride. A three-dimensional nanostructure constructed with the zinc telluride nanowire array was also demonstrated using a template synthesis technique.
format	article
author	Jun Ohta Takeshi Ohgai
author_facet	Jun Ohta Takeshi Ohgai
author_sort	Jun Ohta
title	Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid
title_short	Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid
title_full	Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid
title_fullStr	Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid
title_full_unstemmed	Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid
title_sort	post-annealing effects on the structure and semiconductor performance of nanocrystalline znte thin films electrodeposited from an aqueous solution containing citric acid
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/2c68e1fac0a64476a7397d021ab5d219
work_keys_str_mv	AT junohta postannealingeffectsonthestructureandsemiconductorperformanceofnanocrystallinezntethinfilmselectrodepositedfromanaqueoussolutioncontainingcitricacid AT takeshiohgai postannealingeffectsonthestructureandsemiconductorperformanceofnanocrystallinezntethinfilmselectrodepositedfromanaqueoussolutioncontainingcitricacid
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Post-Annealing Effects on the Structure and Semiconductor Performance of Nanocrystalline ZnTe Thin Films Electrodeposited from an Aqueous Solution Containing Citric Acid

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