Revealing quantum effects in highly conductive δ-layer systems

A solution to performance related challenges posed by nanoscale field effect transistors is to consider atomically thin impurity layers in Si-based devices however there are many aspects of the conductive properties that are still unknown. Here, the authors develop an open system quantum transport m...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Denis Mamaluy, Juan P. Mendez, Xujiao Gao, Shashank Misra
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Astrophysics QB460-466 Physics QC1-999
Acceso en línea:	https://doaj.org/article/2c989a70bbd845da9c31ef22987d25c7
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:2c989a70bbd845da9c31ef22987d25c7
record_format	dspace
spelling	oai:doaj.org-article:2c989a70bbd845da9c31ef22987d25c72021-12-02T15:15:35ZRevealing quantum effects in highly conductive δ-layer systems10.1038/s42005-021-00705-12399-3650https://doaj.org/article/2c989a70bbd845da9c31ef22987d25c72021-09-01T00:00:00Zhttps://doi.org/10.1038/s42005-021-00705-1https://doaj.org/toc/2399-3650A solution to performance related challenges posed by nanoscale field effect transistors is to consider atomically thin impurity layers in Si-based devices however there are many aspects of the conductive properties that are still unknown. Here, the authors develop an open system quantum transport method to investigate the local density electronic states of P-doped Si revealing the role of scattering, thickness and doping density.Denis MamaluyJuan P. MendezXujiao GaoShashank MisraNature PortfolioarticleAstrophysicsQB460-466PhysicsQC1-999ENCommunications Physics, Vol 4, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Astrophysics QB460-466 Physics QC1-999
spellingShingle	Astrophysics QB460-466 Physics QC1-999 Denis Mamaluy Juan P. Mendez Xujiao Gao Shashank Misra Revealing quantum effects in highly conductive δ-layer systems
description	A solution to performance related challenges posed by nanoscale field effect transistors is to consider atomically thin impurity layers in Si-based devices however there are many aspects of the conductive properties that are still unknown. Here, the authors develop an open system quantum transport method to investigate the local density electronic states of P-doped Si revealing the role of scattering, thickness and doping density.
format	article
author	Denis Mamaluy Juan P. Mendez Xujiao Gao Shashank Misra
author_facet	Denis Mamaluy Juan P. Mendez Xujiao Gao Shashank Misra
author_sort	Denis Mamaluy
title	Revealing quantum effects in highly conductive δ-layer systems
title_short	Revealing quantum effects in highly conductive δ-layer systems
title_full	Revealing quantum effects in highly conductive δ-layer systems
title_fullStr	Revealing quantum effects in highly conductive δ-layer systems
title_full_unstemmed	Revealing quantum effects in highly conductive δ-layer systems
title_sort	revealing quantum effects in highly conductive δ-layer systems
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/2c989a70bbd845da9c31ef22987d25c7
work_keys_str_mv	AT denismamaluy revealingquantumeffectsinhighlyconductivedlayersystems AT juanpmendez revealingquantumeffectsinhighlyconductivedlayersystems AT xujiaogao revealingquantumeffectsinhighlyconductivedlayersystems AT shashankmisra revealingquantumeffectsinhighlyconductivedlayersystems
_version_	1718387497915908096

Revealing quantum effects in highly conductive δ-layer systems

Ejemplares similares