The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions
In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рA...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/2cda76c3ec9e43c8b7de81cfbcba263a |
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| Sumario: | In the given paper we present results of I-V characterization of thin film heterojunctions
on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рAs2Se3 layers. The possible mechanisms of the current passing
through obtained structure are discussed on the basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction. |
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