The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions
In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рA...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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oai:doaj.org-article:2cda76c3ec9e43c8b7de81cfbcba263a2021-11-21T12:06:19ZThe electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions 2537-63651810-648Xhttps://doaj.org/article/2cda76c3ec9e43c8b7de81cfbcba263a2008-10-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3952https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рAs2Se3 layers. The possible mechanisms of the current passing through obtained structure are discussed on the basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction. Goglidze, TatianaDementiev, IgorDmitriev, SergheiNasedchina, NadejdaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 4, Pp 471-475 (2008) |
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DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
Physics QC1-999 Electronics TK7800-8360 |
| spellingShingle |
Physics QC1-999 Electronics TK7800-8360 Goglidze, Tatiana Dementiev, Igor Dmitriev, Serghei Nasedchina, Nadejda The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions |
| description |
In the given paper we present results of I-V characterization of thin film heterojunctions
on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рAs2Se3 layers. The possible mechanisms of the current passing
through obtained structure are discussed on the basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction. |
| format |
article |
| author |
Goglidze, Tatiana Dementiev, Igor Dmitriev, Serghei Nasedchina, Nadejda |
| author_facet |
Goglidze, Tatiana Dementiev, Igor Dmitriev, Serghei Nasedchina, Nadejda |
| author_sort |
Goglidze, Tatiana |
| title |
The electrical transport mechanism in the
(nCdS–рAs2Se3) heterojunctions
|
| title_short |
The electrical transport mechanism in the
(nCdS–рAs2Se3) heterojunctions
|
| title_full |
The electrical transport mechanism in the
(nCdS–рAs2Se3) heterojunctions
|
| title_fullStr |
The electrical transport mechanism in the
(nCdS–рAs2Se3) heterojunctions
|
| title_full_unstemmed |
The electrical transport mechanism in the
(nCdS–рAs2Se3) heterojunctions
|
| title_sort |
electrical transport mechanism in the
(ncds–рas2se3) heterojunctions |
| publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
| publishDate |
2008 |
| url |
https://doaj.org/article/2cda76c3ec9e43c8b7de81cfbcba263a |
| work_keys_str_mv |
AT goglidzetatiana theelectricaltransportmechanisminthencdsras2se3heterojunctions AT dementievigor theelectricaltransportmechanisminthencdsras2se3heterojunctions AT dmitrievserghei theelectricaltransportmechanisminthencdsras2se3heterojunctions AT nasedchinanadejda theelectricaltransportmechanisminthencdsras2se3heterojunctions AT goglidzetatiana electricaltransportmechanisminthencdsras2se3heterojunctions AT dementievigor electricaltransportmechanisminthencdsras2se3heterojunctions AT dmitrievserghei electricaltransportmechanisminthencdsras2se3heterojunctions AT nasedchinanadejda electricaltransportmechanisminthencdsras2se3heterojunctions |
| _version_ |
1718419235077619712 |