The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions
In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рA...
Enregistré dans:
| Auteurs principaux: | , , , |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/2cda76c3ec9e43c8b7de81cfbcba263a |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|