Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Guardado en:

Detalles Bibliográficos
Autores principales:	Guo-Wei Lu, Jianxun Hong, Feng Qiu, Andrew M. Spring, Tsubasa Kashino, Juro Oshima, Masa-aki Ozawa, Hideyuki Nawata, Shiyoshi Yokoyama
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/2cea7e22de964e8d90106a68fadc10f5
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:2cea7e22de964e8d90106a68fadc10f5
record_format	dspace
spelling	oai:doaj.org-article:2cea7e22de964e8d90106a68fadc10f52021-12-02T17:18:25ZAuthor Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications10.1038/s41467-020-18908-52041-1723https://doaj.org/article/2cea7e22de964e8d90106a68fadc10f52020-10-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-18908-5https://doaj.org/toc/2041-1723An amendment to this paper has been published and can be accessed via a link at the top of the paper.Guo-Wei LuJianxun HongFeng QiuAndrew M. SpringTsubasa KashinoJuro OshimaMasa-aki OzawaHideyuki NawataShiyoshi YokoyamaNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-1 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Guo-Wei Lu Jianxun Hong Feng Qiu Andrew M. Spring Tsubasa Kashino Juro Oshima Masa-aki Ozawa Hideyuki Nawata Shiyoshi Yokoyama Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications
description	An amendment to this paper has been published and can be accessed via a link at the top of the paper.
format	article
author	Guo-Wei Lu Jianxun Hong Feng Qiu Andrew M. Spring Tsubasa Kashino Juro Oshima Masa-aki Ozawa Hideyuki Nawata Shiyoshi Yokoyama
author_facet	Guo-Wei Lu Jianxun Hong Feng Qiu Andrew M. Spring Tsubasa Kashino Juro Oshima Masa-aki Ozawa Hideyuki Nawata Shiyoshi Yokoyama
author_sort	Guo-Wei Lu
title	Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications
title_short	Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications
title_full	Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications
title_fullStr	Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications
title_full_unstemmed	Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications
title_sort	author correction: high-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 gbit s−1 for energy-efficient datacentres and harsh-environment applications
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/2cea7e22de964e8d90106a68fadc10f5
work_keys_str_mv	AT guoweilu authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT jianxunhong authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT fengqiu authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT andrewmspring authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT tsubasakashino authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT jurooshima authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT masaakiozawa authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT hideyukinawata authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications AT shiyoshiyokoyama authorcorrectionhightemperatureresistantsiliconpolymerhybridmodulatoroperatingatupto200gbits1forenergyefficientdatacentresandharshenvironmentapplications
_version_	1718381076553924608

Author Correction: High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

Ejemplares similares