Facile fabrication of complex networks of memristive devices

Abstract We describe the memristive properties of cluster-assembled gold films. We show that resistive switching is observed in pure metallic nanostructured films at room temperature and atmospheric pressure, in response to applied voltage inputs. In particular, we observe resistance changes up to 4...

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Autores principales:	Chloé Minnai, Andrea Bellacicca, Simon A. Brown, Paolo Milani
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2ceb40f1b8ea4695a6d701aa49bbebde
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spelling	oai:doaj.org-article:2ceb40f1b8ea4695a6d701aa49bbebde2021-12-02T11:40:43ZFacile fabrication of complex networks of memristive devices10.1038/s41598-017-08244-y2045-2322https://doaj.org/article/2ceb40f1b8ea4695a6d701aa49bbebde2017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-08244-yhttps://doaj.org/toc/2045-2322Abstract We describe the memristive properties of cluster-assembled gold films. We show that resistive switching is observed in pure metallic nanostructured films at room temperature and atmospheric pressure, in response to applied voltage inputs. In particular, we observe resistance changes up to 400% and archetypal switching events that have remarkable symmetry with the applied voltage. We associated this symmetry with ‘potentiation’ and ‘anti-potentiation’ processes involving the activation of synapses and of pathways comprising multiple synapses. The stability and reproducibility of the resistance switching, which lasted over many hours, make these devices ideal test-beds for exploration of the basic mechanisms of the switching processes, and allow convenient fabrication of devices that may have neuromorphic properties.Chloé MinnaiAndrea BellaciccaSimon A. BrownPaolo MilaniNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Chloé Minnai Andrea Bellacicca Simon A. Brown Paolo Milani Facile fabrication of complex networks of memristive devices
description	Abstract We describe the memristive properties of cluster-assembled gold films. We show that resistive switching is observed in pure metallic nanostructured films at room temperature and atmospheric pressure, in response to applied voltage inputs. In particular, we observe resistance changes up to 400% and archetypal switching events that have remarkable symmetry with the applied voltage. We associated this symmetry with ‘potentiation’ and ‘anti-potentiation’ processes involving the activation of synapses and of pathways comprising multiple synapses. The stability and reproducibility of the resistance switching, which lasted over many hours, make these devices ideal test-beds for exploration of the basic mechanisms of the switching processes, and allow convenient fabrication of devices that may have neuromorphic properties.
format	article
author	Chloé Minnai Andrea Bellacicca Simon A. Brown Paolo Milani
author_facet	Chloé Minnai Andrea Bellacicca Simon A. Brown Paolo Milani
author_sort	Chloé Minnai
title	Facile fabrication of complex networks of memristive devices
title_short	Facile fabrication of complex networks of memristive devices
title_full	Facile fabrication of complex networks of memristive devices
title_fullStr	Facile fabrication of complex networks of memristive devices
title_full_unstemmed	Facile fabrication of complex networks of memristive devices
title_sort	facile fabrication of complex networks of memristive devices
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2ceb40f1b8ea4695a6d701aa49bbebde
work_keys_str_mv	AT chloeminnai facilefabricationofcomplexnetworksofmemristivedevices AT andreabellacicca facilefabricationofcomplexnetworksofmemristivedevices AT simonabrown facilefabricationofcomplexnetworksofmemristivedevices AT paolomilani facilefabricationofcomplexnetworksofmemristivedevices
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Facile fabrication of complex networks of memristive devices

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