Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various...

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Autores principales:	Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha, Alexander A. Demkov, Hyunsang Hwang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2d115af51862416889643806af10ea45
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spelling	oai:doaj.org-article:2d115af51862416889643806af10ea452021-12-02T16:08:08ZMulti-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application10.1038/s41598-017-04529-42045-2322https://doaj.org/article/2d115af51862416889643806af10ea452017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04529-4https://doaj.org/toc/2045-2322Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the origin of leakage current in NbOx is partly due to insufficient Schottky barrier height originating from interface defects between the electrodes and NbOx layer. The leakage current problem can be addressed by inserting thin NiOy barrier layers. The NiOy inserted NbOx device is drift-free and exhibits high Ion/Ioff ratio (>5400), fast switching speed (<2 ns), and high operating temperature (>453 K) characteristics which are highly suitable to selector application for x-point memory arrays. We show that NbOx device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrates improved readout margin (>29 word lines) suitable for x-point memory array application.Jaehyuk ParkTobias HadamekAgham B. PosadasEuijun ChaAlexander A. DemkovHyunsang HwangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Jaehyuk Park Tobias Hadamek Agham B. Posadas Euijun Cha Alexander A. Demkov Hyunsang Hwang Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
description	Abstract NbO2 has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO2 follows the field-induced nucleation by investigating the delay time dependency at various voltages and temperatures. Based on the investigation, we reveal that the origin of leakage current in NbOx is partly due to insufficient Schottky barrier height originating from interface defects between the electrodes and NbOx layer. The leakage current problem can be addressed by inserting thin NiOy barrier layers. The NiOy inserted NbOx device is drift-free and exhibits high Ion/Ioff ratio (>5400), fast switching speed (<2 ns), and high operating temperature (>453 K) characteristics which are highly suitable to selector application for x-point memory arrays. We show that NbOx device with NiOx interlayers in series with resistive random access memory (ReRAM) device demonstrates improved readout margin (>29 word lines) suitable for x-point memory array application.
format	article
author	Jaehyuk Park Tobias Hadamek Agham B. Posadas Euijun Cha Alexander A. Demkov Hyunsang Hwang
author_facet	Jaehyuk Park Tobias Hadamek Agham B. Posadas Euijun Cha Alexander A. Demkov Hyunsang Hwang
author_sort	Jaehyuk Park
title	Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
title_short	Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
title_full	Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
title_fullStr	Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
title_full_unstemmed	Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
title_sort	multi-layered nioy/nbox/nioy fast drift-free threshold switch with high ion/ioff ratio for selector application
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2d115af51862416889643806af10ea45
work_keys_str_mv	AT jaehyukpark multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT tobiashadamek multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT aghambposadas multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT euijuncha multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT alexanderademkov multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication AT hyunsanghwang multilayerednioynboxnioyfastdriftfreethresholdswitchwithhighionioffratioforselectorapplication
_version_	1718384583886503936

Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application

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