Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

Abstract $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 and $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2...

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Autores principales: A. Bafekry, B. Mortazavi, M. Faraji, M. Shahrokhi, A. Shafique, H. R. Jappor, C. Nguyen, M. Ghergherehchi, S. A. H. Feghhi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/2db6424981e344798d8b62cd1d64a0a7
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Sumario:Abstract $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 and $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers using the density functional theory simulations. Molecular dynamics and phonon dispersion results show the desirable thermal and dynamical stability of studied nanosheets. On the basis of HSE06 and PBE/GGA functionals, we show that all the considered novel monolayers are semiconductors. Using the HSE06 functional the electronic bandgap of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers are predicted to be 2.15, 1.35 and 1.37 eV, respectively. Optical simulations show that the first absorption coefficient peak for $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers along in-plane polarization is suitable for the absorption of the visible and IR range of light. Interestingly, optically anisotropic character along planar directions can be desirable for polarization-sensitive photodetectors. Furthermore, we systematically investigate the electrical transport properties with combined first-principles and Boltzmann transport theory calculations. At optimal doping concentration, we found the considerable larger power factor values of 2.69, 4.91, and 5.45 for hole-doped $$\hbox {Sb}_{{2}}\hbox {S}_{{3}}$$ Sb 2 S 3 , $$\hbox {Sb}_{{2}}\hbox {Se}_{{3}}$$ Sb 2 Se 3 , and $$\hbox {Sb}_{{2}}\hbox {Te}_{{3}}$$ Sb 2 Te 3 , respectively. This study highlights the bright prospect for the application of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 nanosheets in novel electronic, optical and energy conversion systems.