Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure
Abstract $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 and $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2...
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2021
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oai:doaj.org-article:2db6424981e344798d8b62cd1d64a0a72021-12-02T16:50:31ZAb initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure10.1038/s41598-021-89944-42045-2322https://doaj.org/article/2db6424981e344798d8b62cd1d64a0a72021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89944-4https://doaj.org/toc/2045-2322Abstract $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 and $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers using the density functional theory simulations. Molecular dynamics and phonon dispersion results show the desirable thermal and dynamical stability of studied nanosheets. On the basis of HSE06 and PBE/GGA functionals, we show that all the considered novel monolayers are semiconductors. Using the HSE06 functional the electronic bandgap of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers are predicted to be 2.15, 1.35 and 1.37 eV, respectively. Optical simulations show that the first absorption coefficient peak for $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers along in-plane polarization is suitable for the absorption of the visible and IR range of light. Interestingly, optically anisotropic character along planar directions can be desirable for polarization-sensitive photodetectors. Furthermore, we systematically investigate the electrical transport properties with combined first-principles and Boltzmann transport theory calculations. At optimal doping concentration, we found the considerable larger power factor values of 2.69, 4.91, and 5.45 for hole-doped $$\hbox {Sb}_{{2}}\hbox {S}_{{3}}$$ Sb 2 S 3 , $$\hbox {Sb}_{{2}}\hbox {Se}_{{3}}$$ Sb 2 Se 3 , and $$\hbox {Sb}_{{2}}\hbox {Te}_{{3}}$$ Sb 2 Te 3 , respectively. This study highlights the bright prospect for the application of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 nanosheets in novel electronic, optical and energy conversion systems.A. BafekryB. MortazaviM. FarajiM. ShahrokhiA. ShafiqueH. R. JapporC. NguyenM. GhergherehchiS. A. H. FeghhiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021) |
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Medicine R Science Q A. Bafekry B. Mortazavi M. Faraji M. Shahrokhi A. Shafique H. R. Jappor C. Nguyen M. Ghergherehchi S. A. H. Feghhi Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure |
description |
Abstract $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 and $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers using the density functional theory simulations. Molecular dynamics and phonon dispersion results show the desirable thermal and dynamical stability of studied nanosheets. On the basis of HSE06 and PBE/GGA functionals, we show that all the considered novel monolayers are semiconductors. Using the HSE06 functional the electronic bandgap of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers are predicted to be 2.15, 1.35 and 1.37 eV, respectively. Optical simulations show that the first absorption coefficient peak for $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 monolayers along in-plane polarization is suitable for the absorption of the visible and IR range of light. Interestingly, optically anisotropic character along planar directions can be desirable for polarization-sensitive photodetectors. Furthermore, we systematically investigate the electrical transport properties with combined first-principles and Boltzmann transport theory calculations. At optimal doping concentration, we found the considerable larger power factor values of 2.69, 4.91, and 5.45 for hole-doped $$\hbox {Sb}_{{2}}\hbox {S}_{{3}}$$ Sb 2 S 3 , $$\hbox {Sb}_{{2}}\hbox {Se}_{{3}}$$ Sb 2 Se 3 , and $$\hbox {Sb}_{{2}}\hbox {Te}_{{3}}$$ Sb 2 Te 3 , respectively. This study highlights the bright prospect for the application of $$\hbox {Sb}_2\hbox {S}_3$$ Sb 2 S 3 , $$\hbox {Sb}_2\hbox {Se}_3$$ Sb 2 Se 3 and $$\hbox {Sb}_2\hbox {Te}_3$$ Sb 2 Te 3 nanosheets in novel electronic, optical and energy conversion systems. |
format |
article |
author |
A. Bafekry B. Mortazavi M. Faraji M. Shahrokhi A. Shafique H. R. Jappor C. Nguyen M. Ghergherehchi S. A. H. Feghhi |
author_facet |
A. Bafekry B. Mortazavi M. Faraji M. Shahrokhi A. Shafique H. R. Jappor C. Nguyen M. Ghergherehchi S. A. H. Feghhi |
author_sort |
A. Bafekry |
title |
Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure |
title_short |
Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure |
title_full |
Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure |
title_fullStr |
Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure |
title_full_unstemmed |
Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure |
title_sort |
ab initio prediction of semiconductivity in a novel two-dimensional sb2x3 (x= s, se, te) monolayers with orthorhombic structure |
publisher |
Nature Portfolio |
publishDate |
2021 |
url |
https://doaj.org/article/2db6424981e344798d8b62cd1d64a0a7 |
work_keys_str_mv |
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1718383027420135424 |