Author Correction: UV induced resistive switching in hybrid polymer metal oxide memristors
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Guardado en:
Autores principales: | Spyros Stathopoulos, Ioulia Tzouvadaki, Themis Prodromakis |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/2de1b1d9098d4408b89099bd55da9afc |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Real-time encoding and compression of neuronal spikes by metal-oxide memristors
por: Isha Gupta, et al.
Publicado: (2016) -
Seamlessly fused digital-analogue reconfigurable computing using memristors
por: Alexantrou Serb, et al.
Publicado: (2018) -
Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses
por: Alexander Serb, et al.
Publicado: (2016) -
90% yield production of polymer nano-memristor for in-memory computing
por: Bin Zhang, et al.
Publicado: (2021) -
Three-terminal resistive switch based on metal/metal oxide redox reactions
por: Mantao Huang, et al.
Publicado: (2017)