High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts. Here, the authors design photovoltaic detectors and photodiodes based on MoS2 and doped AsP heterojunction with unilateral depletion region reportin...

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Autores principales:	Feng Wu, Qing Li, Peng Wang, Hui Xia, Zhen Wang, Yang Wang, Man Luo, Long Chen, Fansheng Chen, Jinshui Miao, Xiaoshuang Chen, Wei Lu, Chongxin Shan, Anlian Pan, Xing Wu, Wencai Ren, Deep Jariwala, Weida Hu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/2e20c2abf1e9482a9b8ba5afee8fd787
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spelling	oai:doaj.org-article:2e20c2abf1e9482a9b8ba5afee8fd7872021-12-02T14:39:01ZHigh efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region10.1038/s41467-019-12707-32041-1723https://doaj.org/article/2e20c2abf1e9482a9b8ba5afee8fd7872019-10-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-12707-3https://doaj.org/toc/2041-1723Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts. Here, the authors design photovoltaic detectors and photodiodes based on MoS2 and doped AsP heterojunction with unilateral depletion region reporting high external quantum efficiency of 71% under zero applied bias.Feng WuQing LiPeng WangHui XiaZhen WangYang WangMan LuoLong ChenFansheng ChenJinshui MiaoXiaoshuang ChenWei LuChongxin ShanAnlian PanXing WuWencai RenDeep JariwalaWeida HuNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Feng Wu Qing Li Peng Wang Hui Xia Zhen Wang Yang Wang Man Luo Long Chen Fansheng Chen Jinshui Miao Xiaoshuang Chen Wei Lu Chongxin Shan Anlian Pan Xing Wu Wencai Ren Deep Jariwala Weida Hu High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
description	Photovoltaic devices based on 2D materials still suffer from low quantum efficiencies due to interfacial charge recombination and inefficient contacts. Here, the authors design photovoltaic detectors and photodiodes based on MoS2 and doped AsP heterojunction with unilateral depletion region reporting high external quantum efficiency of 71% under zero applied bias.
format	article
author	Feng Wu Qing Li Peng Wang Hui Xia Zhen Wang Yang Wang Man Luo Long Chen Fansheng Chen Jinshui Miao Xiaoshuang Chen Wei Lu Chongxin Shan Anlian Pan Xing Wu Wencai Ren Deep Jariwala Weida Hu
author_facet	Feng Wu Qing Li Peng Wang Hui Xia Zhen Wang Yang Wang Man Luo Long Chen Fansheng Chen Jinshui Miao Xiaoshuang Chen Wei Lu Chongxin Shan Anlian Pan Xing Wu Wencai Ren Deep Jariwala Weida Hu
author_sort	Feng Wu
title	High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
title_short	High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
title_full	High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
title_fullStr	High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
title_full_unstemmed	High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
title_sort	high efficiency and fast van der waals hetero-photodiodes with a unilateral depletion region
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/2e20c2abf1e9482a9b8ba5afee8fd787
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High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region

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