Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films

Abstract It is of paramount importance to improve the control over large area growth of high quality molybdenum disulfide (MoS2) and other types of 2D dichalcogenides. Such atomically thin materials have great potential for use in electronics, and are thought to make possible the first real applicat...

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Autores principales:	Robert Ionescu, Brennan Campbell, Ryan Wu, Ece Aytan, Andrew Patalano, Isaac Ruiz, Stephen W. Howell, Anthony E. McDonald, Thomas E. Beechem, K. Andre Mkhoyan, Mihrimah Ozkan, Cengiz S. Ozkan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2e39b688d97e4adbbc2feeceb7e90c11
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spelling	oai:doaj.org-article:2e39b688d97e4adbbc2feeceb7e90c112021-12-02T12:30:44ZChelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films10.1038/s41598-017-06699-72045-2322https://doaj.org/article/2e39b688d97e4adbbc2feeceb7e90c112017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-06699-7https://doaj.org/toc/2045-2322Abstract It is of paramount importance to improve the control over large area growth of high quality molybdenum disulfide (MoS2) and other types of 2D dichalcogenides. Such atomically thin materials have great potential for use in electronics, and are thought to make possible the first real applications of spintronics. Here in, a facile and reproducible method of producing wafer scale atomically thin MoS2 layers has been developed using the incorporation of a chelating agent in a common organic solvent, dimethyl sulfoxide (DMSO). Previously, solution processing of a MoS2 precursor, ammonium tetrathiomolybdate ((NH4)2MoS4), and subsequent thermolysis was used to produce large area MoS2 layers. Our work here shows that the use of ethylenediaminetetraacetic acid (EDTA) in DMSO exerts superior control over wafer coverage and film thickness, and the results demonstrate that the chelating action and dispersing effect of EDTA is critical in growing uniform films. Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and high-resolution scanning transmission electron microscopy (HR-STEM) indicate the formation of homogenous few layer MoS2 films at the wafer scale, resulting from the novel chelant-in-solution method.Robert IonescuBrennan CampbellRyan WuEce AytanAndrew PatalanoIsaac RuizStephen W. HowellAnthony E. McDonaldThomas E. BeechemK. Andre MkhoyanMihrimah OzkanCengiz S. OzkanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Robert Ionescu Brennan Campbell Ryan Wu Ece Aytan Andrew Patalano Isaac Ruiz Stephen W. Howell Anthony E. McDonald Thomas E. Beechem K. Andre Mkhoyan Mihrimah Ozkan Cengiz S. Ozkan Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films
description	Abstract It is of paramount importance to improve the control over large area growth of high quality molybdenum disulfide (MoS2) and other types of 2D dichalcogenides. Such atomically thin materials have great potential for use in electronics, and are thought to make possible the first real applications of spintronics. Here in, a facile and reproducible method of producing wafer scale atomically thin MoS2 layers has been developed using the incorporation of a chelating agent in a common organic solvent, dimethyl sulfoxide (DMSO). Previously, solution processing of a MoS2 precursor, ammonium tetrathiomolybdate ((NH4)2MoS4), and subsequent thermolysis was used to produce large area MoS2 layers. Our work here shows that the use of ethylenediaminetetraacetic acid (EDTA) in DMSO exerts superior control over wafer coverage and film thickness, and the results demonstrate that the chelating action and dispersing effect of EDTA is critical in growing uniform films. Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and high-resolution scanning transmission electron microscopy (HR-STEM) indicate the formation of homogenous few layer MoS2 films at the wafer scale, resulting from the novel chelant-in-solution method.
format	article
author	Robert Ionescu Brennan Campbell Ryan Wu Ece Aytan Andrew Patalano Isaac Ruiz Stephen W. Howell Anthony E. McDonald Thomas E. Beechem K. Andre Mkhoyan Mihrimah Ozkan Cengiz S. Ozkan
author_facet	Robert Ionescu Brennan Campbell Ryan Wu Ece Aytan Andrew Patalano Isaac Ruiz Stephen W. Howell Anthony E. McDonald Thomas E. Beechem K. Andre Mkhoyan Mihrimah Ozkan Cengiz S. Ozkan
author_sort	Robert Ionescu
title	Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films
title_short	Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films
title_full	Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films
title_fullStr	Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films
title_full_unstemmed	Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films
title_sort	chelant enhanced solution processing for wafer scale synthesis of transition metal dichalcogenide thin films
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2e39b688d97e4adbbc2feeceb7e90c11
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Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films

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