Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures

This paper investigated that the preparation of zinc oxide (ZnO) nanorod (NR) and ZnO NR with graphene material was successfully prepared and explored. The ZnO NRs without and with decorated graphene are also called ZO and ZO-G field-emission (FE) emitters. Besides, the material properties of fabric...

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Autores principales: Yen-Lin Chu, Sheng-Joue Young, Du-Yi Cai, Tung-Te Chu
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Lenguaje:EN
Publicado: IEEE 2021
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Acceso en línea:https://doaj.org/article/2e53801acbe14f579693324d442b4fd2
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spelling oai:doaj.org-article:2e53801acbe14f579693324d442b4fd22021-11-18T00:00:42ZCharacteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures2168-673410.1109/JEDS.2021.3118059https://doaj.org/article/2e53801acbe14f579693324d442b4fd22021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9606849/https://doaj.org/toc/2168-6734This paper investigated that the preparation of zinc oxide (ZnO) nanorod (NR) and ZnO NR with graphene material was successfully prepared and explored. The ZnO NRs without and with decorated graphene are also called ZO and ZO-G field-emission (FE) emitters. Besides, the material properties of fabricated ZO and ZO-G NR arrays were characterized by X-ray diffraction (XRD) spectrometer, X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscope (FE-SEM), Raman spectrometer, and high-resolution transmission electron microscope (HR-TEM) with energy dispersive X-ray (EDX) spectrometer. It was observed that all NRs exhibited the single crystal performance and were uniformly grown on the surface of seed layer. Simultaneously, the samples were victoriously decorated by graphene on the NR surface. As a result, decorating with graphene reduced turn-on field from 6.06 to 4.12 V/<inline-formula> <tex-math notation="LaTeX">${\mu }\text{m}$ </tex-math></inline-formula>. The effective field enhancement factors of the ZO and ZO-G NRs estimated from the slopes of the Fowler&#x2013;Nordheim (F&#x2013;N) plot were approximately 3682 and 7462. Additionally, the UV light treatment can also enhance FE characteristics. The results indicated that these emitters will be useful in FE applications.Yen-Lin ChuSheng-Joue YoungDu-Yi CaiTung-Te ChuIEEEarticleZnO NRschemical bath depositiongrapheneFE emittersElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 1076-1083 (2021)
institution DOAJ
collection DOAJ
language EN
topic ZnO NRs
chemical bath deposition
graphene
FE emitters
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
spellingShingle ZnO NRs
chemical bath deposition
graphene
FE emitters
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Yen-Lin Chu
Sheng-Joue Young
Du-Yi Cai
Tung-Te Chu
Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures
description This paper investigated that the preparation of zinc oxide (ZnO) nanorod (NR) and ZnO NR with graphene material was successfully prepared and explored. The ZnO NRs without and with decorated graphene are also called ZO and ZO-G field-emission (FE) emitters. Besides, the material properties of fabricated ZO and ZO-G NR arrays were characterized by X-ray diffraction (XRD) spectrometer, X-ray photoelectron spectroscopy (XPS), field-emission scanning electron microscope (FE-SEM), Raman spectrometer, and high-resolution transmission electron microscope (HR-TEM) with energy dispersive X-ray (EDX) spectrometer. It was observed that all NRs exhibited the single crystal performance and were uniformly grown on the surface of seed layer. Simultaneously, the samples were victoriously decorated by graphene on the NR surface. As a result, decorating with graphene reduced turn-on field from 6.06 to 4.12 V/<inline-formula> <tex-math notation="LaTeX">${\mu }\text{m}$ </tex-math></inline-formula>. The effective field enhancement factors of the ZO and ZO-G NRs estimated from the slopes of the Fowler&#x2013;Nordheim (F&#x2013;N) plot were approximately 3682 and 7462. Additionally, the UV light treatment can also enhance FE characteristics. The results indicated that these emitters will be useful in FE applications.
format article
author Yen-Lin Chu
Sheng-Joue Young
Du-Yi Cai
Tung-Te Chu
author_facet Yen-Lin Chu
Sheng-Joue Young
Du-Yi Cai
Tung-Te Chu
author_sort Yen-Lin Chu
title Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures
title_short Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures
title_full Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures
title_fullStr Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures
title_full_unstemmed Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures
title_sort characteristics of field-emission emitters based on graphene decorated zno nanostructures
publisher IEEE
publishDate 2021
url https://doaj.org/article/2e53801acbe14f579693324d442b4fd2
work_keys_str_mv AT yenlinchu characteristicsoffieldemissionemittersbasedongraphenedecoratedznonanostructures
AT shengjoueyoung characteristicsoffieldemissionemittersbasedongraphenedecoratedznonanostructures
AT duyicai characteristicsoffieldemissionemittersbasedongraphenedecoratedznonanostructures
AT tungtechu characteristicsoffieldemissionemittersbasedongraphenedecoratedznonanostructures
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