Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions

Abstract Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Kentaro Ogata, Yusuke Nakayama, Gang Xiao, Hideo Kaiju
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2eae4e15317f432c9abf711e6678c704
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:2eae4e15317f432c9abf711e6678c704
record_format	dspace
spelling	oai:doaj.org-article:2eae4e15317f432c9abf711e6678c7042021-12-02T16:14:09ZObservation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions10.1038/s41598-021-93226-42045-2322https://doaj.org/article/2eae4e15317f432c9abf711e6678c7042021-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-93226-4https://doaj.org/toc/2045-2322Abstract Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly on the bias voltage, which reduces the magnitude of TMR. On the other hand, tunnel magnetocapacitance (TMC), which has also been observed in MTJs, can be increased when subjecting to a biasing voltage, thus exhibiting one of the most interesting spin phenomena. Here we report a large voltage-induced TMC beyond 330% in MgO-based MTJs, which is the largest value ever reported for MTJs. The voltage dependence and frequency characteristics of TMC can be explained by the newly proposed Debye-Fröhlich model using Zhang-sigmoid theory, parabolic barrier approximation, and spin-dependent drift diffusion model. Moreover, we predict that the voltage-induced TMC ratio could reach over 3000% in MTJs. It is a reality now that MTJs can be used as capacitors that are small in size, broadly ranged in frequencies and controllable by a voltage. Our theoretical and experimental findings provide a deeper understanding on the exact mechanism of voltage-induced AC spin transports in spintronic devices. Our research may open new avenues to the development of spintronics applications, such as highly sensitive magnetic sensors, high performance non-volatile memories, multi-functional spin logic devices, voltage controlled electronic components, and energy storage devices.Kentaro OgataYusuke NakayamaGang XiaoHideo KaijuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Kentaro Ogata Yusuke Nakayama Gang Xiao Hideo Kaiju Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
description	Abstract Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly on the bias voltage, which reduces the magnitude of TMR. On the other hand, tunnel magnetocapacitance (TMC), which has also been observed in MTJs, can be increased when subjecting to a biasing voltage, thus exhibiting one of the most interesting spin phenomena. Here we report a large voltage-induced TMC beyond 330% in MgO-based MTJs, which is the largest value ever reported for MTJs. The voltage dependence and frequency characteristics of TMC can be explained by the newly proposed Debye-Fröhlich model using Zhang-sigmoid theory, parabolic barrier approximation, and spin-dependent drift diffusion model. Moreover, we predict that the voltage-induced TMC ratio could reach over 3000% in MTJs. It is a reality now that MTJs can be used as capacitors that are small in size, broadly ranged in frequencies and controllable by a voltage. Our theoretical and experimental findings provide a deeper understanding on the exact mechanism of voltage-induced AC spin transports in spintronic devices. Our research may open new avenues to the development of spintronics applications, such as highly sensitive magnetic sensors, high performance non-volatile memories, multi-functional spin logic devices, voltage controlled electronic components, and energy storage devices.
format	article
author	Kentaro Ogata Yusuke Nakayama Gang Xiao Hideo Kaiju
author_facet	Kentaro Ogata Yusuke Nakayama Gang Xiao Hideo Kaiju
author_sort	Kentaro Ogata
title	Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_short	Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_full	Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_fullStr	Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_full_unstemmed	Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
title_sort	observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in mgo-based magnetic tunnel junctions
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/2eae4e15317f432c9abf711e6678c704
work_keys_str_mv	AT kentaroogata observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions AT yusukenakayama observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions AT gangxiao observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions AT hideokaiju observationandtheoreticalcalculationsofvoltageinducedlargemagnetocapacitancebeyond330inmgobasedmagnetictunneljunctions
_version_	1718384341750382592

Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions

Ejemplares similares