Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions
Abstract Magnetic tunnel junctions (MTJs) in the field of spintronics have received enormous attention owing to their fascinating spin phenomena for fundamental physics and potential applications. MTJs exhibit a large tunnel magnetoresistance (TMR) at room temperature. However, TMR depends strongly...
Guardado en:
Autores principales: | Kentaro Ogata, Yusuke Nakayama, Gang Xiao, Hideo Kaiju |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/2eae4e15317f432c9abf711e6678c704 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
por: Hideo Kaiju, et al.
Publicado: (2017) -
Superconductivity assisted change of the perpendicular magnetic anisotropy in V/MgO/Fe junctions
por: César González-Ruano, et al.
Publicado: (2021) -
Spin–orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions
por: Shinji Isogami, et al.
Publicado: (2021) -
Symmetry broken spin reorientation transition in epitaxial MgO/Fe/MgO layers with competing anisotropies
por: Isidoro Martínez, et al.
Publicado: (2018) -
Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions
por: T. Newhouse-Illige, et al.
Publicado: (2017)