Gate tunable giant anisotropic resistance in ultra-thin GaTe

Gate tunable giant anisotropic resistance in ultra-thin GaTe

Some atomically thin crystals feature crystallographic anisotropy, but demonstrations of electrical anisotropy are scarce. Here, the authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tuned up to 103, and demonstrate anisotropic non-vola...

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Main Authors: Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang, Huaihong Guo, Chengbing Qin, Liantuan Xiao, Jing Zhang, Jianhao Chen, Zheng Han, Zhidong Zhang
Format: article
Language:EN
Published: Nature Portfolio 2019
Subjects:
Science
Q
Online Access:https://doaj.org/article/2ee26f33fa694d728ee5f019e31c65bb
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Summary:Some atomically thin crystals feature crystallographic anisotropy, but demonstrations of electrical anisotropy are scarce. Here, the authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tuned up to 103, and demonstrate anisotropic non-volatile memory behavior.

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