Gate tunable giant anisotropic resistance in ultra-thin GaTe

Some atomically thin crystals feature crystallographic anisotropy, but demonstrations of electrical anisotropy are scarce. Here, the authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tuned up to 103, and demonstrate anisotropic non-vola...

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Autores principales:	Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang, Huaihong Guo, Chengbing Qin, Liantuan Xiao, Jing Zhang, Jianhao Chen, Zheng Han, Zhidong Zhang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/2ee26f33fa694d728ee5f019e31c65bb
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spelling	oai:doaj.org-article:2ee26f33fa694d728ee5f019e31c65bb2021-12-02T14:38:39ZGate tunable giant anisotropic resistance in ultra-thin GaTe10.1038/s41467-019-10256-32041-1723https://doaj.org/article/2ee26f33fa694d728ee5f019e31c65bb2019-05-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10256-3https://doaj.org/toc/2041-1723Some atomically thin crystals feature crystallographic anisotropy, but demonstrations of electrical anisotropy are scarce. Here, the authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tuned up to 103, and demonstrate anisotropic non-volatile memory behavior.Hanwen WangMao-Lin ChenMengjian ZhuYaning WangBaojuan DongXingdan SunXiaorong ZhangShimin CaoXiaoxi LiJianqi HuangLei ZhangWeilai LiuDongming SunYu YeKepeng SongJianjian WangYu HanTeng YangHuaihong GuoChengbing QinLiantuan XiaoJing ZhangJianhao ChenZheng HanZhidong ZhangNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Hanwen Wang Mao-Lin Chen Mengjian Zhu Yaning Wang Baojuan Dong Xingdan Sun Xiaorong Zhang Shimin Cao Xiaoxi Li Jianqi Huang Lei Zhang Weilai Liu Dongming Sun Yu Ye Kepeng Song Jianjian Wang Yu Han Teng Yang Huaihong Guo Chengbing Qin Liantuan Xiao Jing Zhang Jianhao Chen Zheng Han Zhidong Zhang Gate tunable giant anisotropic resistance in ultra-thin GaTe
description	Some atomically thin crystals feature crystallographic anisotropy, but demonstrations of electrical anisotropy are scarce. Here, the authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tuned up to 103, and demonstrate anisotropic non-volatile memory behavior.
format	article
author	Hanwen Wang Mao-Lin Chen Mengjian Zhu Yaning Wang Baojuan Dong Xingdan Sun Xiaorong Zhang Shimin Cao Xiaoxi Li Jianqi Huang Lei Zhang Weilai Liu Dongming Sun Yu Ye Kepeng Song Jianjian Wang Yu Han Teng Yang Huaihong Guo Chengbing Qin Liantuan Xiao Jing Zhang Jianhao Chen Zheng Han Zhidong Zhang
author_facet	Hanwen Wang Mao-Lin Chen Mengjian Zhu Yaning Wang Baojuan Dong Xingdan Sun Xiaorong Zhang Shimin Cao Xiaoxi Li Jianqi Huang Lei Zhang Weilai Liu Dongming Sun Yu Ye Kepeng Song Jianjian Wang Yu Han Teng Yang Huaihong Guo Chengbing Qin Liantuan Xiao Jing Zhang Jianhao Chen Zheng Han Zhidong Zhang
author_sort	Hanwen Wang
title	Gate tunable giant anisotropic resistance in ultra-thin GaTe
title_short	Gate tunable giant anisotropic resistance in ultra-thin GaTe
title_full	Gate tunable giant anisotropic resistance in ultra-thin GaTe
title_fullStr	Gate tunable giant anisotropic resistance in ultra-thin GaTe
title_full_unstemmed	Gate tunable giant anisotropic resistance in ultra-thin GaTe
title_sort	gate tunable giant anisotropic resistance in ultra-thin gate
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/2ee26f33fa694d728ee5f019e31c65bb
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Gate tunable giant anisotropic resistance in ultra-thin GaTe

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