Tunnel electroresistance through organic ferroelectrics

Ferroelectric organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. Here, Tian et al. use poly(vinylidene fluoride) with 1–2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperatur...

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Autores principales:	B. B. Tian, J. L. Wang, S. Fusil, Y. Liu, X. L. Zhao, S. Sun, H. Shen, T. Lin, J. L. Sun, C. G. Duan, M. Bibes, A. Barthélémy, B. Dkhil, V. Garcia, X. J. Meng, J. H. Chu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/2ee6601f124c451f8e59846a21af4207
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spelling	oai:doaj.org-article:2ee6601f124c451f8e59846a21af42072021-12-02T17:33:20ZTunnel electroresistance through organic ferroelectrics10.1038/ncomms115022041-1723https://doaj.org/article/2ee6601f124c451f8e59846a21af42072016-05-01T00:00:00Zhttps://doi.org/10.1038/ncomms11502https://doaj.org/toc/2041-1723Ferroelectric organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. Here, Tian et al. use poly(vinylidene fluoride) with 1–2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperature.B. B. TianJ. L. WangS. FusilY. LiuX. L. ZhaoS. SunH. ShenT. LinJ. L. SunC. G. DuanM. BibesA. BarthélémyB. DkhilV. GarciaX. J. MengJ. H. ChuNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q B. B. Tian J. L. Wang S. Fusil Y. Liu X. L. Zhao S. Sun H. Shen T. Lin J. L. Sun C. G. Duan M. Bibes A. Barthélémy B. Dkhil V. Garcia X. J. Meng J. H. Chu Tunnel electroresistance through organic ferroelectrics
description	Ferroelectric organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. Here, Tian et al. use poly(vinylidene fluoride) with 1–2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperature.
format	article
author	B. B. Tian J. L. Wang S. Fusil Y. Liu X. L. Zhao S. Sun H. Shen T. Lin J. L. Sun C. G. Duan M. Bibes A. Barthélémy B. Dkhil V. Garcia X. J. Meng J. H. Chu
author_facet	B. B. Tian J. L. Wang S. Fusil Y. Liu X. L. Zhao S. Sun H. Shen T. Lin J. L. Sun C. G. Duan M. Bibes A. Barthélémy B. Dkhil V. Garcia X. J. Meng J. H. Chu
author_sort	B. B. Tian
title	Tunnel electroresistance through organic ferroelectrics
title_short	Tunnel electroresistance through organic ferroelectrics
title_full	Tunnel electroresistance through organic ferroelectrics
title_fullStr	Tunnel electroresistance through organic ferroelectrics
title_full_unstemmed	Tunnel electroresistance through organic ferroelectrics
title_sort	tunnel electroresistance through organic ferroelectrics
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/2ee6601f124c451f8e59846a21af4207
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Tunnel electroresistance through organic ferroelectrics

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