Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing

Abstract Off-stoichiometric copper chromium oxide delafossite received lately a great interest due to its high p-type electrical conductivity and adequate optical transmittance in the visible range. However, for a suitable integration in active devices such as p-n junctions, transistors or optoelect...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	P. Lunca-Popa, J. Afonso, P. Grysan, J. Crêpellière, R. Leturcq, D. Lenoble
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2ef1813977e04f41ac831ff909e46887
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:2ef1813977e04f41ac831ff909e46887
record_format	dspace
spelling	oai:doaj.org-article:2ef1813977e04f41ac831ff909e468872021-12-02T11:40:24ZTuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing10.1038/s41598-018-25659-32045-2322https://doaj.org/article/2ef1813977e04f41ac831ff909e468872018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25659-3https://doaj.org/toc/2045-2322Abstract Off-stoichiometric copper chromium oxide delafossite received lately a great interest due to its high p-type electrical conductivity and adequate optical transmittance in the visible range. However, for a suitable integration in active devices such as p-n junctions, transistors or optoelectronic devices, the electronic properties must be efficiently tailored. Here, post-deposition thermal treatment is proven as an adequate approach for finely controlling the electrical properties of this former degenerate semiconducting material. The energetics of the annealing process are investigated using two different approaches, as a function of the annealing temperature and as a function of the annealing time, allowing the accurate determination of the activation energy of the annealing of defects. By using this method, the electrical carrier concentration was varied in the 1021 – 1017 cm−3 range while the recorded changes in the drift mobility covered three orders of magnitude. Moreover, we demonstrate the ability to accurately manipulate the Fermi level of such materials, which is of great importance in controlling the carrier injection and extraction in optoelectronic active layers.P. Lunca-PopaJ. AfonsoP. GrysanJ. CrêpellièreR. LeturcqD. LenobleNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q P. Lunca-Popa J. Afonso P. Grysan J. Crêpellière R. Leturcq D. Lenoble Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing
description	Abstract Off-stoichiometric copper chromium oxide delafossite received lately a great interest due to its high p-type electrical conductivity and adequate optical transmittance in the visible range. However, for a suitable integration in active devices such as p-n junctions, transistors or optoelectronic devices, the electronic properties must be efficiently tailored. Here, post-deposition thermal treatment is proven as an adequate approach for finely controlling the electrical properties of this former degenerate semiconducting material. The energetics of the annealing process are investigated using two different approaches, as a function of the annealing temperature and as a function of the annealing time, allowing the accurate determination of the activation energy of the annealing of defects. By using this method, the electrical carrier concentration was varied in the 1021 – 1017 cm−3 range while the recorded changes in the drift mobility covered three orders of magnitude. Moreover, we demonstrate the ability to accurately manipulate the Fermi level of such materials, which is of great importance in controlling the carrier injection and extraction in optoelectronic active layers.
format	article
author	P. Lunca-Popa J. Afonso P. Grysan J. Crêpellière R. Leturcq D. Lenoble
author_facet	P. Lunca-Popa J. Afonso P. Grysan J. Crêpellière R. Leturcq D. Lenoble
author_sort	P. Lunca-Popa
title	Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing
title_short	Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing
title_full	Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing
title_fullStr	Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing
title_full_unstemmed	Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing
title_sort	tuning the electrical properties of the p-type transparent conducting oxide cu1−xcr1+xo2 by controlled annealing
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/2ef1813977e04f41ac831ff909e46887
work_keys_str_mv	AT pluncapopa tuningtheelectricalpropertiesoftheptypetransparentconductingoxidecu1xcr1xo2bycontrolledannealing AT jafonso tuningtheelectricalpropertiesoftheptypetransparentconductingoxidecu1xcr1xo2bycontrolledannealing AT pgrysan tuningtheelectricalpropertiesoftheptypetransparentconductingoxidecu1xcr1xo2bycontrolledannealing AT jcrepelliere tuningtheelectricalpropertiesoftheptypetransparentconductingoxidecu1xcr1xo2bycontrolledannealing AT rleturcq tuningtheelectricalpropertiesoftheptypetransparentconductingoxidecu1xcr1xo2bycontrolledannealing AT dlenoble tuningtheelectricalpropertiesoftheptypetransparentconductingoxidecu1xcr1xo2bycontrolledannealing
_version_	1718395632731815936

Tuning the electrical properties of the p-type transparent conducting oxide Cu1−xCr1+xO2 by controlled annealing

Ejemplares similares