2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Here, three-dimensional hafnium oxide and two-dimensional hexagonal boron nitride are integrated in the insulating section of double-layer graphene optical modulators, leading to a maximum bandwidth of 39 GHz and enhanced modulation efficiency.

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Autores principales:	Hitesh Agarwal, Bernat Terrés, Lorenzo Orsini, Alberto Montanaro, Vito Sorianello, Marianna Pantouvaki, Kenji Watanabe, Takashi Taniguchi, Dries Van Thourhout, Marco Romagnoli, Frank H. L. Koppens
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/2f9cae4941a94a54a2d5dac781458da8
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spelling	oai:doaj.org-article:2f9cae4941a94a54a2d5dac781458da82021-12-02T14:21:30Z2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators10.1038/s41467-021-20926-w2041-1723https://doaj.org/article/2f9cae4941a94a54a2d5dac781458da82021-02-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-20926-whttps://doaj.org/toc/2041-1723Here, three-dimensional hafnium oxide and two-dimensional hexagonal boron nitride are integrated in the insulating section of double-layer graphene optical modulators, leading to a maximum bandwidth of 39 GHz and enhanced modulation efficiency.Hitesh AgarwalBernat TerrésLorenzo OrsiniAlberto MontanaroVito SorianelloMarianna PantouvakiKenji WatanabeTakashi TaniguchiDries Van ThourhoutMarco RomagnoliFrank H. L. KoppensNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Hitesh Agarwal Bernat Terrés Lorenzo Orsini Alberto Montanaro Vito Sorianello Marianna Pantouvaki Kenji Watanabe Takashi Taniguchi Dries Van Thourhout Marco Romagnoli Frank H. L. Koppens 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
description	Here, three-dimensional hafnium oxide and two-dimensional hexagonal boron nitride are integrated in the insulating section of double-layer graphene optical modulators, leading to a maximum bandwidth of 39 GHz and enhanced modulation efficiency.
format	article
author	Hitesh Agarwal Bernat Terrés Lorenzo Orsini Alberto Montanaro Vito Sorianello Marianna Pantouvaki Kenji Watanabe Takashi Taniguchi Dries Van Thourhout Marco Romagnoli Frank H. L. Koppens
author_facet	Hitesh Agarwal Bernat Terrés Lorenzo Orsini Alberto Montanaro Vito Sorianello Marianna Pantouvaki Kenji Watanabe Takashi Taniguchi Dries Van Thourhout Marco Romagnoli Frank H. L. Koppens
author_sort	Hitesh Agarwal
title	2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
title_short	2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
title_full	2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
title_fullStr	2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
title_full_unstemmed	2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
title_sort	2d-3d integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/2f9cae4941a94a54a2d5dac781458da8
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2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

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