Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss
Abstract Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for...
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Nature Portfolio
2017
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oai:doaj.org-article:30d2c227327145c6b3f495db60d4a5b32021-12-02T16:06:27ZTitanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss10.1038/s41598-017-07019-92045-2322https://doaj.org/article/30d2c227327145c6b3f495db60d4a5b32017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07019-9https://doaj.org/toc/2045-2322Abstract Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2–0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band.Chuying YuYang ZengBin YangRobert DonnanJinbao HuangZhaoxian XiongAmit MahajanBaogui ShiHaitao YeRussell BinionsNadezda V. TarakinaMike J ReeceHaixue YanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017) |
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Medicine R Science Q Chuying Yu Yang Zeng Bin Yang Robert Donnan Jinbao Huang Zhaoxian Xiong Amit Mahajan Baogui Shi Haitao Ye Russell Binions Nadezda V. Tarakina Mike J Reece Haixue Yan Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss |
| description |
Abstract Realising engineering ceramics to serve as substrate materials in high-performance terahertz(THz) that are low-cost, have low dielectric loss and near-dispersionless broadband, high permittivity, is exceedingly demanding. Such substrates are deployed in, for example, integrated circuits for synthesizing and converting nonplanar and 3D structures into planar forms. The Rutile form of titanium dioxide (TiO2) has been widely accepted as commercially economical candidate substrate that meets demands for both low-loss and high permittivities at sub-THz bands. However, the relationship between its mechanisms of dielectric response to the microstructure have never been systematically investigated in order to engineer ultra-low dielectric-loss and high value, dispersionless permittivities. Here we show TiO2 THz dielectrics with high permittivity (ca. 102.30) and ultra-low loss (ca. 0.0042). These were prepared by insight gleaned from a broad use of materials characterisation methods to successfully engineer porosities, second phase, crystallography shear-planes and oxygen vacancies during sintering. The dielectric loss achieved here is not only with negligible dispersion over 0.2–0.8 THz, but also has the lowest value measured for known high-permittivity dielectrics. We expect the insight afforded by this study will underpin the development of subwavelength-scale, planar integrated circuits, compact high Q-resonators and broadband, slow-light devices in the THz band. |
| format |
article |
| author |
Chuying Yu Yang Zeng Bin Yang Robert Donnan Jinbao Huang Zhaoxian Xiong Amit Mahajan Baogui Shi Haitao Ye Russell Binions Nadezda V. Tarakina Mike J Reece Haixue Yan |
| author_facet |
Chuying Yu Yang Zeng Bin Yang Robert Donnan Jinbao Huang Zhaoxian Xiong Amit Mahajan Baogui Shi Haitao Ye Russell Binions Nadezda V. Tarakina Mike J Reece Haixue Yan |
| author_sort |
Chuying Yu |
| title |
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss |
| title_short |
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss |
| title_full |
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss |
| title_fullStr |
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss |
| title_full_unstemmed |
Titanium Dioxide Engineered for Near-dispersionless High Terahertz Permittivity and Ultra-low-loss |
| title_sort |
titanium dioxide engineered for near-dispersionless high terahertz permittivity and ultra-low-loss |
| publisher |
Nature Portfolio |
| publishDate |
2017 |
| url |
https://doaj.org/article/30d2c227327145c6b3f495db60d4a5b3 |
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