Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector

To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg<sub>2</sub>Si/Si PDs are required...

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Autores principales:	Hong Yu, Chenggui Gao, Jiang Zou, Wensheng Yang, Quan Xie
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	Mg<sub>2</sub>Si/Si heterojunction PD SWIR photoelectric properties atlas Applied optics. Photonics TA1501-1820
Acceso en línea:	https://doaj.org/article/30da4ca9e51f4b9c8710878a96c1252a
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spelling	oai:doaj.org-article:30da4ca9e51f4b9c8710878a96c1252a2021-11-25T18:43:34ZSimulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector10.3390/photonics81105092304-6732https://doaj.org/article/30da4ca9e51f4b9c8710878a96c1252a2021-11-01T00:00:00Zhttps://www.mdpi.com/2304-6732/8/11/509https://doaj.org/toc/2304-6732To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg<sub>2</sub>Si/Si PDs are required. First, the structural model of the Mg<sub>2</sub>Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg<sub>2</sub>Si and Si on the photoelectric properties of the Mg<sub>2</sub>Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg<sub>2</sub>Si/Si heterojunction interface. When the doping concentrations of Si and Mg<sub>2</sub>Si layer were 10<sup>17</sup>, and 10<sup>16</sup> cm<sup>−3</sup>, respectively, the Mg<sub>2</sub>Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10<sup>−11</sup> WHz<sup>–1/2</sup> at 1000 nm, the maximum detectivity was 1.4 × 10<sup>10</sup> Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg<sub>2</sub>Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.Hong YuChenggui GaoJiang ZouWensheng YangQuan XieMDPI AGarticleMg<sub>2</sub>Si/Si heterojunctionPDSWIRphotoelectric propertiesatlasApplied optics. PhotonicsTA1501-1820ENPhotonics, Vol 8, Iss 509, p 509 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Mg<sub>2</sub>Si/Si heterojunction PD SWIR photoelectric properties atlas Applied optics. Photonics TA1501-1820
spellingShingle	Mg<sub>2</sub>Si/Si heterojunction PD SWIR photoelectric properties atlas Applied optics. Photonics TA1501-1820 Hong Yu Chenggui Gao Jiang Zou Wensheng Yang Quan Xie Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector
description	To develop and design an environmentally friendly, low-cost shortwave infrared (SWIR) photodetector (PD) material and extend the optical response cutoff wavelengths of existing silicon photodetectors beyond 1100 nm, high-performance silicon-compatible Mg<sub>2</sub>Si/Si PDs are required. First, the structural model of the Mg<sub>2</sub>Si/Si heterojunction was established using the Silvaco Atlas module. Second, the effects of the doping concentrations of Mg<sub>2</sub>Si and Si on the photoelectric properties of the Mg<sub>2</sub>Si/Si heterojunction PD, including the energy band, breakdown voltage, dark current, forward conduction voltage, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on/off ratio, response time, and recovery time, were simulated. At different doping concentrations, the heterojunction energy band shifted, and a peak barrier appeared at the conduction band of the Mg<sub>2</sub>Si/Si heterojunction interface. When the doping concentrations of Si and Mg<sub>2</sub>Si layer were 10<sup>17</sup>, and 10<sup>16</sup> cm<sup>−3</sup>, respectively, the Mg<sub>2</sub>Si/Si heterojunction PD could obtain optimal photoelectric properties. Under these conditions, the maximum EQE was 70.68% at 800 nm, the maximum responsivity was 0.51 A/W at 1000 nm, the minimum NEP was 7.07 × 10<sup>−11</sup> WHz<sup>–1/2</sup> at 1000 nm, the maximum detectivity was 1.4 × 10<sup>10</sup> Jones at 1000 nm, and the maximum on/off ratio was 141.45 at 1000 nm. The simulation and optimization result also showed that the Mg<sub>2</sub>Si/Si heterojunction PD could be used for visible and SWIR photodetection in the wavelength range from 400 to 1500 nm. The results also provide technical support for the future preparation of eco-friendly heterojunction photodetectors.
format	article
author	Hong Yu Chenggui Gao Jiang Zou Wensheng Yang Quan Xie
author_facet	Hong Yu Chenggui Gao Jiang Zou Wensheng Yang Quan Xie
author_sort	Hong Yu
title	Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector
title_short	Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector
title_full	Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector
title_fullStr	Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector
title_full_unstemmed	Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector
title_sort	simulation study on the effect of doping concentrations on the photodetection properties of mg<sub>2</sub>si/si heterojunction photodetector
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/30da4ca9e51f4b9c8710878a96c1252a
work_keys_str_mv	AT hongyu simulationstudyontheeffectofdopingconcentrationsonthephotodetectionpropertiesofmgsub2subsisiheterojunctionphotodetector AT chengguigao simulationstudyontheeffectofdopingconcentrationsonthephotodetectionpropertiesofmgsub2subsisiheterojunctionphotodetector AT jiangzou simulationstudyontheeffectofdopingconcentrationsonthephotodetectionpropertiesofmgsub2subsisiheterojunctionphotodetector AT wenshengyang simulationstudyontheeffectofdopingconcentrationsonthephotodetectionpropertiesofmgsub2subsisiheterojunctionphotodetector AT quanxie simulationstudyontheeffectofdopingconcentrationsonthephotodetectionpropertiesofmgsub2subsisiheterojunctionphotodetector
_version_	1718410762047717376

Simulation Study on the Effect of Doping Concentrations on the Photodetection Properties of Mg<sub>2</sub>Si/Si Heterojunction Photodetector

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