An atomic carbon source for high temperature molecular beam epitaxy of graphene

Abstract We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule...

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Autores principales:	J. D. Albar, A. Summerfield, T. S. Cheng, A. Davies, E. F. Smith, A. N. Khlobystov, C. J. Mellor, T. Taniguchi, K. Watanabe, C. T. Foxon, L. Eaves, P. H. Beton, S. V. Novikov
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/3129cbf984284527ac9876d7d8fbcca0
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id	oai:doaj.org-article:3129cbf984284527ac9876d7d8fbcca0
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spelling	oai:doaj.org-article:3129cbf984284527ac9876d7d8fbcca02021-12-02T15:05:59ZAn atomic carbon source for high temperature molecular beam epitaxy of graphene10.1038/s41598-017-07021-12045-2322https://doaj.org/article/3129cbf984284527ac9876d7d8fbcca02017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-07021-1https://doaj.org/toc/2045-2322Abstract We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.J. D. AlbarA. SummerfieldT. S. ChengA. DaviesE. F. SmithA. N. KhlobystovC. J. MellorT. TaniguchiK. WatanabeC. T. FoxonL. EavesP. H. BetonS. V. NovikovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q J. D. Albar A. Summerfield T. S. Cheng A. Davies E. F. Smith A. N. Khlobystov C. J. Mellor T. Taniguchi K. Watanabe C. T. Foxon L. Eaves P. H. Beton S. V. Novikov An atomic carbon source for high temperature molecular beam epitaxy of graphene
description	Abstract We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.
format	article
author	J. D. Albar A. Summerfield T. S. Cheng A. Davies E. F. Smith A. N. Khlobystov C. J. Mellor T. Taniguchi K. Watanabe C. T. Foxon L. Eaves P. H. Beton S. V. Novikov
author_facet	J. D. Albar A. Summerfield T. S. Cheng A. Davies E. F. Smith A. N. Khlobystov C. J. Mellor T. Taniguchi K. Watanabe C. T. Foxon L. Eaves P. H. Beton S. V. Novikov
author_sort	J. D. Albar
title	An atomic carbon source for high temperature molecular beam epitaxy of graphene
title_short	An atomic carbon source for high temperature molecular beam epitaxy of graphene
title_full	An atomic carbon source for high temperature molecular beam epitaxy of graphene
title_fullStr	An atomic carbon source for high temperature molecular beam epitaxy of graphene
title_full_unstemmed	An atomic carbon source for high temperature molecular beam epitaxy of graphene
title_sort	atomic carbon source for high temperature molecular beam epitaxy of graphene
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/3129cbf984284527ac9876d7d8fbcca0
work_keys_str_mv	AT jdalbar anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT asummerfield anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT tscheng anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT adavies anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT efsmith anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT ankhlobystov anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT cjmellor anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT ttaniguchi anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT kwatanabe anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT ctfoxon anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT leaves anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT phbeton anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT svnovikov anatomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT jdalbar atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT asummerfield atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT tscheng atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT adavies atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT efsmith atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT ankhlobystov atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT cjmellor atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT ttaniguchi atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT kwatanabe atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT ctfoxon atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT leaves atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT phbeton atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene AT svnovikov atomiccarbonsourceforhightemperaturemolecularbeamepitaxyofgraphene
_version_	1718388635137474560

An atomic carbon source for high temperature molecular beam epitaxy of graphene

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