High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time

Abstract There is a great interest in phototransistors based on transition metal dichalcogenides because of their interesting optoelectronic properties. However, most emphasis has been put on MoS2 and little attention has been given to MoSe2, which has higher optical absorbance. Here, we present a c...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Hyejoo Lee, Jongtae Ahn, Seongil Im, Jiyoung Kim, Woong Choi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/31f499517dc245e8b000790f87c759f0
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:31f499517dc245e8b000790f87c759f0
record_format	dspace
spelling	oai:doaj.org-article:31f499517dc245e8b000790f87c759f02021-12-02T11:41:03ZHigh-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time10.1038/s41598-018-29942-12045-2322https://doaj.org/article/31f499517dc245e8b000790f87c759f02018-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-29942-1https://doaj.org/toc/2045-2322Abstract There is a great interest in phototransistors based on transition metal dichalcogenides because of their interesting optoelectronic properties. However, most emphasis has been put on MoS2 and little attention has been given to MoSe2, which has higher optical absorbance. Here, we present a compelling case for multilayer MoSe2 phototransistors fabricated in a bottom-gate thin-film transistor configuration on SiO2/Si substrates. Under 650-nm-laser, our MoSe2 phototransistor exhibited the best performance among MoSe2 phototransistors in literature, including the highest responsivity (1.4 × 105 AW−1), the highest specific detectivity (5.5 × 1013 jones), and the fastest response time (1.7 ms). We also present a qualitative model to describe the device operation based on the combination of photoconductive and photogating effects. These results demonstrate the feasibility of achieving high performance in multilayer MoSe2 phototransistors, suggesting the possibility of further enhancement in the performance of MoSe2 phototransistors with proper device engineering.Hyejoo LeeJongtae AhnSeongil ImJiyoung KimWoong ChoiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hyejoo Lee Jongtae Ahn Seongil Im Jiyoung Kim Woong Choi High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time
description	Abstract There is a great interest in phototransistors based on transition metal dichalcogenides because of their interesting optoelectronic properties. However, most emphasis has been put on MoS2 and little attention has been given to MoSe2, which has higher optical absorbance. Here, we present a compelling case for multilayer MoSe2 phototransistors fabricated in a bottom-gate thin-film transistor configuration on SiO2/Si substrates. Under 650-nm-laser, our MoSe2 phototransistor exhibited the best performance among MoSe2 phototransistors in literature, including the highest responsivity (1.4 × 105 AW−1), the highest specific detectivity (5.5 × 1013 jones), and the fastest response time (1.7 ms). We also present a qualitative model to describe the device operation based on the combination of photoconductive and photogating effects. These results demonstrate the feasibility of achieving high performance in multilayer MoSe2 phototransistors, suggesting the possibility of further enhancement in the performance of MoSe2 phototransistors with proper device engineering.
format	article
author	Hyejoo Lee Jongtae Ahn Seongil Im Jiyoung Kim Woong Choi
author_facet	Hyejoo Lee Jongtae Ahn Seongil Im Jiyoung Kim Woong Choi
author_sort	Hyejoo Lee
title	High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time
title_short	High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time
title_full	High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time
title_fullStr	High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time
title_full_unstemmed	High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time
title_sort	high-responsivity multilayer mose2 phototransistors with fast response time
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/31f499517dc245e8b000790f87c759f0
work_keys_str_mv	AT hyejoolee highresponsivitymultilayermose2phototransistorswithfastresponsetime AT jongtaeahn highresponsivitymultilayermose2phototransistorswithfastresponsetime AT seongilim highresponsivitymultilayermose2phototransistorswithfastresponsetime AT jiyoungkim highresponsivitymultilayermose2phototransistorswithfastresponsetime AT woongchoi highresponsivitymultilayermose2phototransistorswithfastresponsetime
_version_	1718395452505718784

High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time

Ejemplares similares