Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Abstract Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-c...

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Autores principales:	Fuliang Wang, Yuping Le
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/32554000166d412f9fcdf073ae00ece9
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spelling	oai:doaj.org-article:32554000166d412f9fcdf073ae00ece92021-12-02T17:52:41ZExperiment and simulation of single inhibitor SH110 for void-free TSV copper filling10.1038/s41598-021-91318-92045-2322https://doaj.org/article/32554000166d412f9fcdf073ae00ece92021-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-91318-9https://doaj.org/toc/2045-2322Abstract Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-component additive was developed: 3-(2-(4,5-dihydrothiazol-2-yl) disulfanyl) propane-1-sulfonic acid/sulfonate (SH110). Sodium 3,3′-dithiodipropane sulfonate (SPS) and SH110 were used as additives for TSV electroplating copper filling. SH110 resulted in void-free filling, whereas large keyhole voids were found for SPS. To understand how the additives affect the filling mechanism, linear sweep voltammetry of the plating solutions was carried out. The interactions between the Cu surface and additives were simulated by molecular dynamics (MD) analysis using Materials Studio software, and quantum chemistry calculations were conducted using GAUSSIAN 09W. SH110 adsorbs to the Cu surface by both 4,5-dihydrothiazole (DHT) and 3-mercaptopropane sulfonate (MPS) moieties, while SPS is adsorbed only by MPS moieties. MD simulations indicated that the adsorption of the coplanar MPS moiety is the main factor governing acceleration. Quantum chemistry calculations showed that DHT provides an inhibitory effect for TSV filling, while MPS acts as an accelerator for SH110. SH110 is an excellent additive exhibiting both the acceleration and the suppression necessary for achieving void-free TSV filling.Fuliang WangYuping LeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Fuliang Wang Yuping Le Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
description	Abstract Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-component additive was developed: 3-(2-(4,5-dihydrothiazol-2-yl) disulfanyl) propane-1-sulfonic acid/sulfonate (SH110). Sodium 3,3′-dithiodipropane sulfonate (SPS) and SH110 were used as additives for TSV electroplating copper filling. SH110 resulted in void-free filling, whereas large keyhole voids were found for SPS. To understand how the additives affect the filling mechanism, linear sweep voltammetry of the plating solutions was carried out. The interactions between the Cu surface and additives were simulated by molecular dynamics (MD) analysis using Materials Studio software, and quantum chemistry calculations were conducted using GAUSSIAN 09W. SH110 adsorbs to the Cu surface by both 4,5-dihydrothiazole (DHT) and 3-mercaptopropane sulfonate (MPS) moieties, while SPS is adsorbed only by MPS moieties. MD simulations indicated that the adsorption of the coplanar MPS moiety is the main factor governing acceleration. Quantum chemistry calculations showed that DHT provides an inhibitory effect for TSV filling, while MPS acts as an accelerator for SH110. SH110 is an excellent additive exhibiting both the acceleration and the suppression necessary for achieving void-free TSV filling.
format	article
author	Fuliang Wang Yuping Le
author_facet	Fuliang Wang Yuping Le
author_sort	Fuliang Wang
title	Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
title_short	Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
title_full	Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
title_fullStr	Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
title_full_unstemmed	Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling
title_sort	experiment and simulation of single inhibitor sh110 for void-free tsv copper filling
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/32554000166d412f9fcdf073ae00ece9
work_keys_str_mv	AT fuliangwang experimentandsimulationofsingleinhibitorsh110forvoidfreetsvcopperfilling AT yupingle experimentandsimulationofsingleinhibitorsh110forvoidfreetsvcopperfilling
_version_	1718379158500802560

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

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