Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Abstract Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-c...

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Autores principales: Fuliang Wang, Yuping Le
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/32554000166d412f9fcdf073ae00ece9
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