Growth of wide band-gap II-VI compound substrates with controlled electric parameters
Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/32c60e8305b943649eb77148c545a98b |
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| Sumario: | Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area substrates with controlled electric parameters are estimated. |
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