Growth of wide band-gap II-VI compound substrates with controlled electric parameters
Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012
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oai:doaj.org-article:32c60e8305b943649eb77148c545a98b2021-11-21T12:00:59ZGrowth of wide band-gap II-VI compound substrates with controlled electric parameters2537-63651810-648Xhttps://doaj.org/article/32c60e8305b943649eb77148c545a98b2012-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/22421https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area substrates with controlled electric parameters are estimated.Colibaba, GlebGoncearenco, EvgheniiNedeoglo, DumitruNedeoglo, NataliaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 4, Pp 361-365 (2012) |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia Growth of wide band-gap II-VI compound substrates with controlled electric parameters |
description |
Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area substrates with controlled electric parameters are estimated. |
format |
article |
author |
Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia |
author_facet |
Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia |
author_sort |
Colibaba, Gleb |
title |
Growth of wide band-gap II-VI compound substrates with controlled electric parameters |
title_short |
Growth of wide band-gap II-VI compound substrates with controlled electric parameters |
title_full |
Growth of wide band-gap II-VI compound substrates with controlled electric parameters |
title_fullStr |
Growth of wide band-gap II-VI compound substrates with controlled electric parameters |
title_full_unstemmed |
Growth of wide band-gap II-VI compound substrates with controlled electric parameters |
title_sort |
growth of wide band-gap ii-vi compound substrates with controlled electric parameters |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2012 |
url |
https://doaj.org/article/32c60e8305b943649eb77148c545a98b |
work_keys_str_mv |
AT colibabagleb growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters AT goncearencoevghenii growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters AT nedeoglodumitru growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters AT nedeoglonatalia growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters |
_version_ |
1718419295280562176 |