Growth of wide band-gap II-VI compound substrates with controlled electric parameters

Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed...

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Autores principales:	Colibaba, Gleb, Goncearenco, Evghenii, Nedeoglo, Dumitru, Nedeoglo, Natalia
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/32c60e8305b943649eb77148c545a98b
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spelling	oai:doaj.org-article:32c60e8305b943649eb77148c545a98b2021-11-21T12:00:59ZGrowth of wide band-gap II-VI compound substrates with controlled electric parameters2537-63651810-648Xhttps://doaj.org/article/32c60e8305b943649eb77148c545a98b2012-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/22421https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area substrates with controlled electric parameters are estimated.Colibaba, GlebGoncearenco, EvgheniiNedeoglo, DumitruNedeoglo, NataliaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 4, Pp 361-365 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia Growth of wide band-gap II-VI compound substrates with controlled electric parameters
description	Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area substrates with controlled electric parameters are estimated.
format	article
author	Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia
author_facet	Colibaba, Gleb Goncearenco, Evghenii Nedeoglo, Dumitru Nedeoglo, Natalia
author_sort	Colibaba, Gleb
title	Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_short	Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_full	Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_fullStr	Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_full_unstemmed	Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_sort	growth of wide band-gap ii-vi compound substrates with controlled electric parameters
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/32c60e8305b943649eb77148c545a98b
work_keys_str_mv	AT colibabagleb growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters AT goncearencoevghenii growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters AT nedeoglodumitru growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters AT nedeoglonatalia growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters
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Growth of wide band-gap II-VI compound substrates with controlled electric parameters

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