Growth of wide band-gap II-VI compound substrates with controlled electric parameters

Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed...

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Autores principales: Colibaba, Gleb, Goncearenco, Evghenii, Nedeoglo, Dumitru, Nedeoglo, Natalia
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
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Acceso en línea:https://doaj.org/article/32c60e8305b943649eb77148c545a98b
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spelling oai:doaj.org-article:32c60e8305b943649eb77148c545a98b2021-11-21T12:00:59ZGrowth of wide band-gap II-VI compound substrates with controlled electric parameters2537-63651810-648Xhttps://doaj.org/article/32c60e8305b943649eb77148c545a98b2012-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/22421https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area substrates with controlled electric parameters are estimated.Colibaba, GlebGoncearenco, EvgheniiNedeoglo, DumitruNedeoglo, NataliaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 4, Pp 361-365 (2012)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Colibaba, Gleb
Goncearenco, Evghenii
Nedeoglo, Dumitru
Nedeoglo, Natalia
Growth of wide band-gap II-VI compound substrates with controlled electric parameters
description Features of the growth of large ZnSe and ZnS single crystals by a physical vapor transport with subsequent doping by thermal diffusion from Zn Al melt, as well as ZnO single crystals by the chemical vapor transport technique with the use of HCl as a transport agent and a dopant source, are discussed in the present paper. Based on the investigation of electric and luminescent properties of these samples with various doping level, the prospects of the used techniques for obtaining large-area substrates with controlled electric parameters are estimated.
format article
author Colibaba, Gleb
Goncearenco, Evghenii
Nedeoglo, Dumitru
Nedeoglo, Natalia
author_facet Colibaba, Gleb
Goncearenco, Evghenii
Nedeoglo, Dumitru
Nedeoglo, Natalia
author_sort Colibaba, Gleb
title Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_short Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_full Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_fullStr Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_full_unstemmed Growth of wide band-gap II-VI compound substrates with controlled electric parameters
title_sort growth of wide band-gap ii-vi compound substrates with controlled electric parameters
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2012
url https://doaj.org/article/32c60e8305b943649eb77148c545a98b
work_keys_str_mv AT colibabagleb growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters
AT goncearencoevghenii growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters
AT nedeoglodumitru growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters
AT nedeoglonatalia growthofwidebandgapiivicompoundsubstrateswithcontrolledelectricparameters
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