Strain-engineered growth of two-dimensional materials

Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

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Autores principales:	Geun Ho Ahn, Matin Amani, Haider Rasool, Der-Hsien Lien, James P. Mastandrea, Joel W. Ager III, Madan Dubey, Daryl C. Chrzan, Andrew M. Minor, Ali Javey
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/33e7ffb9ddbe48afb45a3445ae9af879
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id	oai:doaj.org-article:33e7ffb9ddbe48afb45a3445ae9af879
record_format	dspace
spelling	oai:doaj.org-article:33e7ffb9ddbe48afb45a3445ae9af8792021-12-02T14:40:49ZStrain-engineered growth of two-dimensional materials10.1038/s41467-017-00516-52041-1723https://doaj.org/article/33e7ffb9ddbe48afb45a3445ae9af8792017-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-00516-5https://doaj.org/toc/2041-1723Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.Geun Ho AhnMatin AmaniHaider RasoolDer-Hsien LienJames P. MastandreaJoel W. Ager IIIMadan DubeyDaryl C. ChrzanAndrew M. MinorAli JaveyNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Geun Ho Ahn Matin Amani Haider Rasool Der-Hsien Lien James P. Mastandrea Joel W. Ager III Madan Dubey Daryl C. Chrzan Andrew M. Minor Ali Javey Strain-engineered growth of two-dimensional materials
description	Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.
format	article
author	Geun Ho Ahn Matin Amani Haider Rasool Der-Hsien Lien James P. Mastandrea Joel W. Ager III Madan Dubey Daryl C. Chrzan Andrew M. Minor Ali Javey
author_facet	Geun Ho Ahn Matin Amani Haider Rasool Der-Hsien Lien James P. Mastandrea Joel W. Ager III Madan Dubey Daryl C. Chrzan Andrew M. Minor Ali Javey
author_sort	Geun Ho Ahn
title	Strain-engineered growth of two-dimensional materials
title_short	Strain-engineered growth of two-dimensional materials
title_full	Strain-engineered growth of two-dimensional materials
title_fullStr	Strain-engineered growth of two-dimensional materials
title_full_unstemmed	Strain-engineered growth of two-dimensional materials
title_sort	strain-engineered growth of two-dimensional materials
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/33e7ffb9ddbe48afb45a3445ae9af879
work_keys_str_mv	AT geunhoahn strainengineeredgrowthoftwodimensionalmaterials AT matinamani strainengineeredgrowthoftwodimensionalmaterials AT haiderrasool strainengineeredgrowthoftwodimensionalmaterials AT derhsienlien strainengineeredgrowthoftwodimensionalmaterials AT jamespmastandrea strainengineeredgrowthoftwodimensionalmaterials AT joelwageriii strainengineeredgrowthoftwodimensionalmaterials AT madandubey strainengineeredgrowthoftwodimensionalmaterials AT darylcchrzan strainengineeredgrowthoftwodimensionalmaterials AT andrewmminor strainengineeredgrowthoftwodimensionalmaterials AT alijavey strainengineeredgrowthoftwodimensionalmaterials
_version_	1718390102418259968

Strain-engineered growth of two-dimensional materials

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