Strain-engineered growth of two-dimensional materials
Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.
Saved in:
Main Authors: | Geun Ho Ahn, Matin Amani, Haider Rasool, Der-Hsien Lien, James P. Mastandrea, Joel W. Ager III, Madan Dubey, Daryl C. Chrzan, Andrew M. Minor, Ali Javey |
---|---|
Format: | article |
Language: | EN |
Published: |
Nature Portfolio
2017
|
Subjects: | |
Online Access: | https://doaj.org/article/33e7ffb9ddbe48afb45a3445ae9af879 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Large-area and bright pulsed electroluminescence in monolayer semiconductors
by: Der-Hsien Lien, et al.
Published: (2018) -
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
by: Kevin Chen, et al.
Published: (2016) -
Strain-engineered diffusive atomic switching in two-dimensional crystals
by: Janne Kalikka, et al.
Published: (2016) -
Defective TiO2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells
by: Yanbo Li, et al.
Published: (2016) -
Strain engineering of two-dimensional multilayered heterostructures for beyond-lithium-based rechargeable batteries
by: Pan Xiong, et al.
Published: (2020)