Fast electronic resistance switching involving hidden charge density wave states

The control of a material's state via external stimuli is the basis of modern information storage technology. Here, the authors use pulsed currents to induce fast switching between Mott insulator and metallic states in the charge density wave system 1T-TaS2, presenting an all-electronic storage...

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Autores principales:	I. Vaskivskyi, I. A. Mihailovic, S. Brazovskii, J. Gospodaric, T. Mertelj, D. Svetin, P. Sutar, D. Mihailovic
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/341d8c6042c041ef967e900007d5685c
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id	oai:doaj.org-article:341d8c6042c041ef967e900007d5685c
record_format	dspace
spelling	oai:doaj.org-article:341d8c6042c041ef967e900007d5685c2021-12-02T17:32:21ZFast electronic resistance switching involving hidden charge density wave states10.1038/ncomms114422041-1723https://doaj.org/article/341d8c6042c041ef967e900007d5685c2016-05-01T00:00:00Zhttps://doi.org/10.1038/ncomms11442https://doaj.org/toc/2041-1723The control of a material's state via external stimuli is the basis of modern information storage technology. Here, the authors use pulsed currents to induce fast switching between Mott insulator and metallic states in the charge density wave system 1T-TaS2, presenting an all-electronic storage mechanism.I. VaskivskyiI. A. MihailovicS. BrazovskiiJ. GospodaricT. MerteljD. SvetinP. SutarD. MihailovicNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-6 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q I. Vaskivskyi I. A. Mihailovic S. Brazovskii J. Gospodaric T. Mertelj D. Svetin P. Sutar D. Mihailovic Fast electronic resistance switching involving hidden charge density wave states
description	The control of a material's state via external stimuli is the basis of modern information storage technology. Here, the authors use pulsed currents to induce fast switching between Mott insulator and metallic states in the charge density wave system 1T-TaS2, presenting an all-electronic storage mechanism.
format	article
author	I. Vaskivskyi I. A. Mihailovic S. Brazovskii J. Gospodaric T. Mertelj D. Svetin P. Sutar D. Mihailovic
author_facet	I. Vaskivskyi I. A. Mihailovic S. Brazovskii J. Gospodaric T. Mertelj D. Svetin P. Sutar D. Mihailovic
author_sort	I. Vaskivskyi
title	Fast electronic resistance switching involving hidden charge density wave states
title_short	Fast electronic resistance switching involving hidden charge density wave states
title_full	Fast electronic resistance switching involving hidden charge density wave states
title_fullStr	Fast electronic resistance switching involving hidden charge density wave states
title_full_unstemmed	Fast electronic resistance switching involving hidden charge density wave states
title_sort	fast electronic resistance switching involving hidden charge density wave states
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/341d8c6042c041ef967e900007d5685c
work_keys_str_mv	AT ivaskivskyi fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates AT iamihailovic fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates AT sbrazovskii fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates AT jgospodaric fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates AT tmertelj fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates AT dsvetin fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates AT psutar fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates AT dmihailovic fastelectronicresistanceswitchinginvolvinghiddenchargedensitywavestates
_version_	1718380300172525568

Fast electronic resistance switching involving hidden charge density wave states

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